Semiconductor device
View Patent ↗In a semiconductor device according to an aspect of the invention, a direction in which a fourth metal interconnection layer located on a semiconductor layer is extended is orthogonal to a direction in which third interconnection layers ML 30 and ML 37 located on the fourth interconnection layer are extended. Thus, even in a case where a stress is applied from outside to bonding pads BP 1 and BP 2 located above, the stress is wholly dispersed by the third interconnection layers and the fourth interconnection layer which are laminated to intersect with each other, and stress concentration on a particular point can be relieved to restrain deterioration in semiconductor device strength to a minimum. Accordingly, it is possible to provide the semiconductor device having a structure in which productivity of the semiconductor device can be improved while the stress concentration applied from outside on the particular point of the bonding pad is relieved.
1. A semiconductor device comprising:
a first interconnection layer that includes a bonding pad exposed from an opening provided in a surface protective film;
a first via layer that is provided below said first interconnection layer;
a second interconnection layer that is provided below said first via layer;
a second via layer that is provided below said second interconnection layer;
a third interconnection layer that is provided below said second via layer and disposed in a stripe shape;
a third via layer that is provided below said third interconnection layer;
a fourth interconnection layer that is provided below said third via layer and disposed in a stripe shape; and
a fourth via layer that is provided below said fourth interconnection layer, wherein
said first interconnection layer, said first via layer, said second interconnection layer, said second via layer, said third interconnection layer, said third via layer, said fourth interconnection layer, and said fourth via layer are laminated,
the bonding pad overlaps the first via layer, the second interconnection layer, the third interconnection layer, and the fourth interconnection layer in plan view,
the first via layer is formed in a stripe shape and is disposed in parallel to the third interconnection layer,
a first width of the first via layer is equal to or smaller than a second width of the third interconnection layer, and the second width of the third interconnection layer is equal to or smaller than a third width of the fourth interconnection layer,
a direction in which said third interconnection layer extends is orthogonal to a direction in which said fourth interconnection layer extends,
said first interconnection layer, said first via layer, said second interconnection layer, said second via layer, said third interconnection layer, said third via layer, said fourth interconnection layer, said fourth via layer, and a semiconductor layer are laminated on a semiconductor chip having a rectangular shape in a planar view,
said first via layer is provided in parallel to an outer peripheral edge of said semiconductor chip while being disposed in a stripe shape,
said third interconnection layer is provided in parallel to an outer periphery of said semiconductor chip,
a gate electrode layer is disposed in a stripe shape in said semiconductor layer, and
a direction in which said gate electrode layer extends is parallel to said direction in which said fourth interconnection layer extends.
2. The semiconductor device according to claim 1 , wherein
columnar support structures are provided between a portion below said bonding pad and a portion above said gate electrode layer, said columnar support structures supporting a gap between said first interconnection layer and said second interconnection layer, a gap between said second interconnection layer and said third interconnection layer, a gap between said third interconnection layer and said fourth interconnection layer, and a gap between said fourth interconnection layer and said gate electrode layer at identical points in a planar view.
3. The semiconductor device according to claim 1 , wherein
a circular power supply potential interconnection disposed along the outer peripheral edge and a circular reference potential interconnection disposed inside the power supply potential interconnection are provided in said semiconductor chip,
a circuit in which said third interconnection layer is used as said power supply potential interconnection and a circuit in which said third interconnection layer is used as said reference potential interconnection are defined, and
bonding pads are arranged in a zigzag manner in a planar view above a direction in which said power supply potential interconnection and said reference potential interconnection are laminated.
4. The semiconductor device according to claim 1 , wherein
a support pad is provided between said first interconnection layer constituting said bonding pad and said first via layer, said support pad having an area larger than an area of said opening provided in said surface protective film and having hardness larger than hardness of said first interconnection layer.
5. The semiconductor device according to claim 4 , wherein
columnar support structures are disposed in regions near four corners of said bonding pad.
6. The semiconductor device according to claim 4 , wherein
an element isolation region provided in said semiconductor layer is located in a lower surface of a gate electrode layer supporting columnar support structures.