Permutable switching network with enhanced multicasting signals routing for interconnection fabric

1. An integrated circuit, comprising: a L-level permutable switching network (L-PSN);

wherein the L-PSN comprises:

for (I[i]/D[i])>1, i)[i]>1, L≧1 and i=[1:L], L levels of conductors of I[i] number of conductors consisting of D[i] sets of conductors,

wherein at least one j where D[j]>2 for j selected from j=[1:L];

an 0-th level of conductors of I[0] number of conductors,

wherein (I[0]/Π i=[1:L] D[i]>1;

an (L+1)-th level of conductors of I[L+1] number of conductors comprising D[L+1] sets of conductors,

wherein D[L+1]>2 and (I[L+1]/D[L+1])=Π i=[1:L] D[i]; and

Σ i=[1:L+1] (I[i−1]×D[i]) number of switches;

wherein the I[i−1] number of conductors of the (i−1)-th level of conductors selectively couple to (I[i]/D[i]) number of conductors in each of the D[i] sets of conductors of the i-th level of conductors through a respective I[i−1] number of switches of the Σ i=[1:L+1] (I[i−1]×D[i]) number of switches for i=[ 1 :L+1];

each conductor of the (i−1)-th level of conductors selectively couples to one conductor in each of the D[i] sets of conductors of the i-th level of conductors through a respective switch of the respective I[i−1] number of switches for i=[1:L+1];

for an j selected from j=[1:L] and D S [j]=(I[j−1]/I[j])×D[j], the I[j−1] number of conductors of the (j−1)-th level of conductors consisting of (I[j−1]/D S [j]) groups of D S [j] number of conductors,

wherein each of the D S [j] number of conductors of the (I[j−1]/D S [j]) groups selectively couple to one conductor in each of the D[j] sets of conductors of the j-th level of conductors through a respective D S [j] number of switches of the respective I[j−1] number of switches; and

for T>1 and L>1, any D S [j+1] groups of D S [j] number of conductors of (T×D S [j+1]) groups of D S [j] number of conductors of the (j−1)-th level of conductors selectively couple to D S [j+1] number of conductors in each of the D[j] sets of conductors of T groups of D S[+1 ] number of conductors of the j-th level of conductors of D[j] sets of conductors through a respective (D S [j+1]×D S [j]×D[j]) number of switches,

wherein the D S [j+1] groups of D S [j] number of conductors selectively couple to the conductors of at least two groups of D S [j+1] number of conductors of at least one of the D[j] sets of conductors of the T groups of D S[+1 ] number of conductors through a respective (D S +[j+1]×D S [j]) number of switches of the (D S [j+1]×D S [j]×D[j]) number of switches.

2. The integrated circuit of claim 1 , wherein any D S [j+1] groups of D S [j] number of conductors of the (T×D S [j+1]) groups of D S [j] number of conductors selectively couple to conductors of at least (D[j]+1) groups of D S [j+1] number of conductors of the T groups of D S [j+1] number of conductors of the D[j] sets of conductors,

wherein the at least (D[j]+1) groups of D S [j+1] number of conductors comprises at least one group of D S [j+1] number of conductors from each of the D[j] sets of conductors of the T groups of D S [j+1] number of conductors.

3. The integrated circuit of claim 2 , wherein T=(I[j−1]/D S [j]/D S [j+1]).

4. The integrated circuit of claim 1 , wherein any D S [j+1] groups of D S [j] number of conductors of the (T×D S [j+1]) groups of D S [j] number of conductors selectively couple to conductors of at least (2D[j]−1) groups of D S [j+1] number of conductors of the T groups of D S [j+1] number of conductors of the D[j] sets of conductors,

wherein the at least (2D[j]−1) groups of D S [j+1] number of conductors comprises at least one group of D S [j+1] number of conductors from each of the D[j] sets of conductors of the T groups of D S [j+1] number of conductors.

5. The integrated circuit of claim 4 , wherein T=(I[j−1]/D S [j]/D S [j+1]).

6. The integrated circuit of claim 1 , wherein for T≧D S [j+1], any D S [j+1] groups of D S [j] number of conductors of the (T×D S [j+1]) groups of D S [j] number of conductors selectively couple to conductors of at least (D S [j+1]×(D[j]−1)+1) groups of D S[+1 ] number of conductors of the T groups of D S [j+1] number of conductors of the D[j] sets of conductors,

wherein the at least (D S [j+1]×(D[j]−1)+1) groups of D S [j+1] number of conductors comprises at least one group of D S [j+1] number of conductors from each of the D[j] sets of conductors of the T groups of D S [j+1] number of conductors.

7. The integrated circuit of claim 6 , wherein T=(I[j−1]/D S [j]/D S [j+1]).

8. A method to manufacture an integrated circuit, comprising:

fabricating a L-level permutable switching network (L-PSN),

wherein the L-PSN comprises:

for (I[i]/D[i])>1, D[i]>1, L>1 and i=[1:L], L levels of conductors of I[i] number of conductors consisting of D[i] sets of conductors,

wherein at least one j where D[j]>2 for j selected from j=[1:L];

an 0-th level of conductors of I[0] number of conductors,

wherein (I[0]/Π i=[1:L] D[i])>1;

an (L+1)-th level of conductors of I[L+1] number of conductors comprising D[L+1] sets of conductors,

wherein D[L+1]>2 and (I[L+1]/D[L+1])=Π i=[1:L] D[i]; and

Σ i=[1:L+1] (I[i−1]×D[i]) number of switches;

selectively coupling the I[i−1] number of conductors of the (i−1)-th level of conductors to (I[i]/D[i]) number of conductors in each of the D[i] sets of conductors of the i-th level of conductors through a respective I[i−1] number of switches of the Σ i=[1:L+1] (I[i−1]×D[i]) number of switches for i=[1:L+1];

selectively coupling each conductor of the (i−1)-th level of conductors to one conductor in each of the D[i] sets of conductors of the i-th level of conductors through a respective switch of the respective I[i−1] number of switches for i=[1:L+1];

for an j selected from j=[1:L] and D S [j]=(I[j−1]/I[j])×D[j], the I[j−1] number of conductors of the (j−1)-th level of conductors comprising (I[j−1]/D S [j]) groups of D S [j] number of conductors,

selectively coupling each of the D S [j] number of conductors of the (I[j−1]/D S [j]) groups to one conductor in each of the D[j] sets of conductors of the j-th level of conductors through a respective D S [j] number of switches of the respective I[j−1] number of switches; and

for T>1 and L>1, selectively coupling any D S [j+1] groups of D S [j] number of conductors of (T×D S [j+1]) groups of D S [j] number of conductors of the (j−1)-th level of conductors to D S [j+1] number of conductors in each of the D[j] sets of conductors of T groups of D S [j+1] number of conductors of the j-th level of conductors of D[j] sets of conductors through a respective (D S [j+1]×D S [j]×D[j]) number of switches, selectively coupling the D S [j+1] groups of D S [j] number of conductors to the conductors of at least two groups of D S [j+1] number of conductors of at least one of the D[j] sets of conductors of the T groups of D S [j+1] number of conductors through a respective (D S [j+1]×D S [j]) number of switches of the (D S [j+1]×D S [j]×D[j]) number of switches.

9. The method of claim 8 , further comprising selectively coupling any D S [j+1] groups of D S [j] number of conductors of the (T×D S [j+1]) groups of D S [j] number of conductors to conductors of at least (D[j]+1) groups of D S [j+1] number of conductors of the T groups of D S [j+1] number of conductors of the D[j] sets of conductors,

wherein the at least (D[j]+1) groups of D S [j+1] number of conductors comprises at least one group of D S [j+1] number of conductors from each of the D[j] sets of conductors of the T groups of D S [j+1] number of conductors.

10. The method of claim 9 , wherein T=(I[j−1]/D S [j]/D S [j+1]).

11. The method of claim 8 , further comprising selectively coupling any D S [j+1] groups of D S [h] number of conductors of the (T×D S [j+1]) groups of D S [j] number of conductors to conductors of at least (2D[j]−1) groups of D S [j+1] number of conductors of the T groups of D S [h+1] number of conductors of the D[j] sets of conductors,

wherein the at least (2D[j]−1) groups of D S [j+1] number of conductors comprises at least one group of D S [j+1] number of conductors from each of the D[j] sets of conductors of the T groups of D S [j+1] number of conductors.

12. The method of claim 11 , wherein T=(I[j−1]/D S [j]/D S [j+1]).

13. The method of claim 8 , further comprising selectively coupling for T≧D S [j+1], any D S [j+1] groups of D S [j] number of conductors of the (T×D S [j+1]) groups of D S [j] number of conductors to conductors of at least (D S [j+1]×(D[j]−1)+1) groups of D S [j+1] number of conductors of the T groups of D S[+1 ] number of conductors of the D[j] sets of conductors,

wherein the at least (D S [j+1]×(D[h]−1)+1) groups of D S [j+1] number of conductors comprises at least one group of D S [j+1] number of conductors from each of the D[j] sets of conductors of the T groups of D S [j+1] number of conductors.

14. The method of claim 13 , wherein T=(I[j−1]/D S [j]/D S [j+1]).

15. An article of manufacture comprising a machine readable storage medium that stores data representing an integrated circuit layout, comprising: a L-level permutable switching network (L-PSN);

wherein the L-PSN comprises:

for (I[i]/D[i])>1, D[i]>1, L>1 and i=[1:L], L levels of conductors of I[i] number of conductors consisting of D[i] sets of conductors,

wherein at least one j where D[j]>2 for j selected from j=[1:L];

an 0-th level of conductors of I[0] number of conductors,

wherein (I[0]/Π i=[1:L] D[i])>1;

an (L+1)-th level of conductors of I[L+1] number of conductors comprising D[L+1] sets of conductors,

wherein D[L+1]>2 and (I[L+1]/D[L+1])=Π i=[1:L] D[i]; and

Σ i=[1:L+1] (I[i−1]×D[i]) number of switches;

wherein the I[i−1] number of conductors of the (i−1)-th level of conductors selectively couple to (I[i]/D[i]) number of conductors in each of the D[i] sets of conductors of the i-th level of conductors through a respective I[i−1] number of switches of the Σ i=[1:L+1] (I[i−1]×D[i]) number of switches for i=[1:L+1];

each conductor of the (i−1)-th level of conductors selectively couples to one conductor in each of the D[i] sets of conductors of the i-th level of conductors through a respective switch of the respective I[i−1] number of switches for i=[1:L+1];

for an j selected from j=[1:L] and D S [j]=(I[j−1]/I[j])×D[j], the I[j−1] number of conductors of the (j−1)-th level of conductors consisting of (I[j−1]/D S [j]) groups of D S [j] number of conductors,

wherein each of the D S [j] number of conductors of the (I[j−1]/D S [j]) groups selectively couple to one conductor in each of the D[j] sets of conductors of the j-th level of conductors through a respective D S [j] number of switches of the respective I[j−1] number of switches; and

for T>1 and L>1, any D S [j+1] groups of D S [j] number of conductors of (T×D S [j+1]) groups of D S [j] number of conductors of the (j−1)-th level of conductors selectively couple to D S [j+1] number of conductors in each of the D[j] sets of conductors of T groups of D S [j+1] number of conductors of the j-th level of conductors of D[j] sets of conductors through a respective (D S [j+1]×D S [j]×D[j]) number of switches,

wherein the D S [j+1] groups of D S [j] number of conductors selectively couple to the conductors of at least two groups of D S [j+1] number of conductors of at least one of the D[j] sets of conductors of the T groups of D S [j+1] number of conductors through a respective (D S [j+1]×D S [j]) number of switches of the (D S [j+1]×D S [j]×D[j]) number of switches.

16. The article of manufacture of claim 15 , wherein any D S [j+1] groups of D S [j] number of conductors of the (T×D S [j+1]) groups of D S [j] number of conductors selectively couple to conductors of at least (D[j]+1) groups of D S [j+1] number of conductors of the T groups of D S [j+1] number of conductors of the D[j] sets of conductors,

wherein the at least (D[j]+1) groups of D S [j+1] number of conductors comprises at least one group of D S [j+1] number of conductors from each of the D[j] sets of conductors of the T groups of D S [j+1] number of conductors.

17. The article of manufacture of claim 16 , wherein T=(I[j−1]/D S [j]/D S [j+1]).

18. The article of manufacture of claim 15 , wherein any D S [j+1] groups of D S [j] number of conductors of the (T×D S [j+1]) groups of D S [j] number of conductors selectively couple to conductors of at least (2D[j]−1) groups of D S [j+1] number of conductors of the T groups of D S [j+1] number of conductors of the D[j] sets of conductors,

wherein the at least (2D[j]−1) groups of D S [j+1] number of conductors comprises at least one group of D S[+1 ] number of conductors from each of the D[j] sets of conductors of the T groups of D S [j+1] number of conductors.

19. The article of manufacture of claim 18 , wherein T=(I[j−1]/D S [j]/D S [j+1]).

20. The article of manufacture of claim 15 , wherein for T≧D S [j+1], any D S [j+1] groups of D S [j] number of conductors of the (T×D S [j+1]) groups of D S [j] number of conductors selectively couple to conductors of at least (D S [j+1]×(D[j]−1)+1) groups of D S [j+1] number of conductors of the T groups of D S [j+1] number of conductors of the D[j] sets of conductors,

wherein the at least (D S [j+1]×(D[j]−1)+1) groups of D S [j+1] number of conductors comprises at least one group of D S [j+1] number of conductors from each of the D[j] sets of conductors of the T groups of D S [j+1] number of conductors.

21. The article of manufacture of claim 20 , wherein T=(I[j−1]/D S [j]/D S [j+1]).