IP Library Granted Patent US 7,826,297
Granted Patent B2
US 7,826,297 · App. 12/328,180 · Granted Nov 2, 2010

Power supply switching circuit

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Quick Facts
Patent No.
US 7,826,297
App. No.
12/328,180
Granted
Nov 2, 2010
Kind
B2
Abstract

In a power supply switching circuit, a transistor that switches to a highest voltage is formed of an enhancement type PMOS transistor, and transistors that switch other voltages are each formed of a depletion type NMOS transistor. A signal for controlling a gate of each of the transistors is input through a level shifter. The depletion type NMOS transistor does not operate in a bipolar manner even if a source voltage thereof reaches a power supply voltage VPP 1 or VPP 2 , and the enhancement type PMOS transistor does not operate in the bipolar manner even if a gate voltage and a source voltage thereof reach the power supply voltage VPP 1 , and a drain voltage thereof reaches the power supply voltage VPP 2 . Accordingly, there can be provided the power supply voltage switching circuit that is high in efficiency.

Claims (16)

1. A power supply switching circuit that switches over a plurality of power supply voltages used within a nonvolatile memory to output the plurality of switched power supply voltages to a power supply voltage output terminal, comprising:

a first power supply voltage input terminal to which a first power supply voltage being a highest voltage among the plurality of power supply voltages is input;

a second power supply voltage input terminal to which a second power supply voltage being a voltage lower than the first power supply voltage is input;

an enhancement type PMOS transistor that is disposed between the first power supply voltage input terminal and the power supply voltage output terminal, and has a back gate connected to the first power supply voltage;

a depletion type NMOS transistor that is disposed between the second power supply voltage input terminal and the power supply voltage output terminal, and has a back gate connected to a ground voltage VSS;

a first level shift circuit that converts an amplitude of a first control signal for controlling a gate of the enhancement type PMOS transistor from the first power supply voltage into the ground voltage VSS; and

a second level shift circuit that converts an amplitude of a second control signal for controlling a gate of the depletion type NMOS transistor from the first power supply voltage into the ground voltage VSS.

2. A power supply switching circuit that switches over a plurality of power supply voltages used within a nonvolatile memory to output the plurality of switched power supply voltages to a power supply voltage output terminal, comprising:

a first power supply voltage input terminal to which a first power supply voltage being a highest voltage among the plurality of power supply voltages is input;

a second power supply voltage input terminal to which a second power supply voltage being a voltage lower than the first power supply voltage is input;

an enhancement type PMOS transistor that is disposed between the first power supply voltage input terminal and the power supply voltage output terminal, and has a back gate connected to the first power supply voltage;

a depletion type NMOS transistor that is disposed between the second power supply voltage input terminal and the power supply voltage output terminal, and has a back gate connected to a ground voltage VSS;

a first level shift circuit that converts an amplitude of a first control signal for controlling a gate of the enhancement type PMOS transistor from the first power supply voltage into the ground voltage VSS; and

a second level shift circuit that converts an amplitude of a second control signal for controlling a gate of the depletion type NMOS transistor from the second power supply voltage into the ground voltage VSS.

3. A power supply switching circuit according to claim 1 , wherein the nonvolatile memory comprises an EEPROM.

4. A power supply switching circuit according to claim 2 , wherein the nonvolatile memory comprises an EEPROM.

Assignments (4)
CHANGE OF NAME Recorded Mar 12, 2018
From: SII SEMICONDUCTOR CORPORATION
To: ABLIC INC.
Reel/Frame 045567/0927 →
CORRECTIVE ASSIGNMENT TO CORRECT THE EXECUTION DATE PREVIOUSLY RECORDED AT REEL: 037783 FRAME: 0166. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT. Recorded Feb 23, 2016
From: SEIKO INSTRUMENTS INC
To: SII SEMICONDUCTOR CORPORATION
Reel/Frame 037903/0928 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 11, 2016
From: SEIKO INSTRUMENTS INC
To: SII SEMICONDUCTOR CORPORATION .
Reel/Frame 037783/0166 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 19, 2009
From: TAKEDA, TAKAHISA; UTSUNOMIYA, FUMIYASU
To: SEIKO INSTRUMENTS INC.
Reel/Frame 022285/0376 →