Dual gate oxide analog circuit architecture with dual voltage supplies and associated method
View Patent ↗An analog circuit architecture is fabricated with dual gate oxides and dual voltage supplies. In the analog circuit architecture, different kinds of devices/transistors with different gate oxide thicknesses are biased by different voltages, such that advantages of each device technology are mixed to enhance total performance of the analog circuit. For example, thin oxide 0.18 um transistors are biased at 1.8V for higher speed and lower power consumption, whereas thick oxide 0.35 um transistors are biased at 3.3V for a wider signal swing range.
1. A multi-power multi-gate-oxide pipeline analog-to-digital converter (ADC) comprising:
a plurality of pipeline modules, each pipeline module comprising:
a plurality of first devices powered by a first voltage;
a plurality of second devices powered by a second voltage,
wherein the second voltage is different from the first voltage;
an input circuit;
an output circuit; and
a core circuit,
wherein the ADC is an analog circuit for processing an analog signal, the input circuit and the output circuit comprise a first portion of the first devices and the second devices, the core circuit comprises a second portion of the first devices, the input circuit and the output circuit respectively receive and transmit a high-swing signal, and the core circuit is connected between the input circuit and the output circuit for signal processing of the high-swing signal received from the input circuit.
2. The multi-power multi-gate-oxide pipeline analog-to-digital converter of claim 1 , wherein the first devices are thin-gate-oxide metal-oxide-semiconductor (MOS) transistors, the second devices are thick-gate-oxide MOS transistors, and the second voltage is higher than the first voltage.
3. The multi-power multi-gate-oxide pipeline analog-to-digital converter of claim 1 , wherein the first devices and the second devices are formed in one process but undergo different process steps.
4. The multi-power multi-gate-oxide pipeline analog-to-digital converter of claim 1 being implemented on a single substrate.
5. A multi-power multi-gate-oxide pipeline analog-to-digital converter comprising:
a plurality of pipeline modules, each pipeline module comprising:
a plurality of first devices powered by a first voltage;
a plurality of second devices powered by a second voltage,
wherein the second voltage is different from the first voltage;
a sample/hold circuit,
an output amplifier; and
a core circuit,
wherein the sample/hold circuit and the output amplifier comprise a first portion of the first devices and the second devices, a core circuit comprises a second portion of the first devices, the sample/hold circuit and the output amplifier receive and transmit a high-swing signal respectively, and the core circuit is connected between the sample/hold circuit and the output amplifier for processing the high-swing signal received from the sample/hold circuit.
6. The multi-power multi-gate-oxide pipeline analog-to-digital converter of claim 5 , wherein the core circuit comprises:
an ADC module for generating a digital signal based on an output signal from the sample/hold circuit;
a digital-to-analog converter for converting the digital signal to an analog signal; and
a synthesizer for synthesizing the analog signal and the output signal of the sample/hold circuit.
7. The multi-power multi-gate-oxide pipeline analog-to-digital converter of claim 5 further comprising:
a plurality of delay circuits corresponding to the plurality of pipeline modules, each delay circuit delaying a digital signal from the corresponding pipeline module; and
a digital error correction circuit for generating a digital output signal according to the delayed digital signals of the delay circuits.
8. The multi-power multi-gate-oxide pipeline analog-to-digital converter of claim 7 , wherein each delay circuit and the error correction circuit comprise a plurality of the first devices.
9. The multi-power multi-gate-oxide pipeline analog-to-digital converter of claim 5 , wherein the first devices are thin-gate-oxide metal-oxide-semiconductor (MOS) transistors, the second devices are thick-gate-oxide MOS transistors, and the second voltage is higher than the first voltage.
10. The multi-power multi-gate-oxide pipeline analog-to-digital converter of claim 5 , wherein the first devices and the second devices are formed in one process but undergo different process steps.
11. The multi-power multi-gate-oxide pipeline analog-to-digital converter of claim 5 being implemented on a single substrate.