Alternating current light emitting device with plural conductors of electrodes for coupling to adjacent light emitting unit
View Patent ↗An alternating current (AC) light emitting device is revealed. The AC light emitting device includes a substrate and a plurality of light emitting units arranged on the substrate. The light emitting unit consists of a first semiconductor layer, a light emitting layer, a second semiconductor layer, at least one electrode and at least one second electrode respectively arranged on the first semiconductor layer and the second semiconductor layer from bottom to top. The plurality of light emitting units is coupled to at least one adjacent light emitting unit by a plurality of conductors. By the plurality of conductors that connect light emitting units with at least one adjacent light emitting unit, an open circuit will not occur in the AC light emitting device once one of the conductors is broken.
1. An alternating current light emitting device comprising:
a substrate, and
a plurality of light emitting units having:
a first semiconductor layer disposed on the substrate;
a light emitting layer arranged over the first semiconductor layer; and
a second semiconductor layer disposed over the light emitting layer;
wherein the alternating current light emitting device further comprising at least one first electrode and at least one second electrode while the first electrode is arranged on the first semiconductor layer and the second electrode is disposed on the second semiconductor layer; the first electrode as well as the second electrode is coupled to adjacent light emitting unit by a plurality of conductors.
2. The device as claimed in claim 1 , wherein the plurality of light emitting units is with the same or different area.
3. The device as claimed in claim 1 , wherein the plurality of light emitting units is semiconductor epitaxial layer.
4. The device as claimed in claim 1 , wherein a plurality of first electrodes respectively is arranged on the first semiconductor layer and each of the electrodes is coupled to adjacent light emitting unit by at least one of the conductors.
5. The device as claimed in claim 1 , wherein connection directions of the plurality of conductors of the plurality of light emitting units are the same or are different.
6. The device as claimed in claim 5 , wherein a plurality of first semiconductor layers of the plurality of light emitting units respectively is coupled to a second semiconductor layer of an adjacent light emitting unit by the plurality of conductors.
7. The device as claimed in claim 5 , wherein a plurality of second semiconductor layers of the plurality of light emitting units respectively is coupled to a first semiconductor layer of adjacent light emitting units by the plurality of conductors.
8. The device as claimed in claim 1 , wherein the plurality of light emitting units is with various geometric shapes.
9. The device as claimed in claim 8 , wherein the geometric shapes include rectangle, square, triangle, rhombus, trapezoid, polygon, convex shape, concave shape or combinations of above shapes.
10. The device as claimed in claim 9 , wherein the plurality of light emitting units are with the same or different area.
11. The device as claimed in claim 1 , wherein the plurality of light emitting units are electrically connected in series, parallel or series-parallel to form a full wave AC light emitting device.
12. The device as claimed in claim 1 , wherein the plurality of light emitting units are electrically connected in series, parallel or series-parallel to form a bridge AC light emitting device.
13. The device as claimed in claim 1 , wherein the AC light emitting device further comprising a bridge rectifier circuit.
14. The device as claimed in claim 13 , wherein the bridge rectifier circuit includes a plurality of semiconductor epitaxial layers.
15. The device as claimed in claim 14 , wherein the plurality of semiconductor epitaxial layers is a plurality of third light emitting units, having a first semiconductor layer, a light emitting layer and a second semiconductor layer from bottom to top; wherein the semiconductor epitaxial layers further comprising a first electrode and a second electrode while the first electrode is disposed on the first semiconductor layer and the second electrode is arranged on the second semiconductor layer.
16. The device as claimed in claim 14 , wherein the plurality of semiconductor epitaxial layers is a plurality of diodes, having a first semiconductor layer and a second semiconductor layer from bottom to top; wherein the semiconductor epitaxial layers further comprising a first electrode and a second electrode while the first electrode is disposed on the first semiconductor layer and the second electrode is arranged on the second semiconductor layer.
17. The device as claimed in claim 1 , wherein at least two of the plurality of conductors are coupled to adjacent light emitting unit.
18. The device as claimed in claim 1 , wherein a way of the plurality of conductors coupled to adjacent light emitting unit is parallel coupling or non-parallel coupling.