Organic light emitting display and manufacturing method thereof
View Patent ↗The present invention relates to an organic light emitting device and a manufacturing method thereof. The organic light emitting device according to an exemplary embodiment of the present invention includes a first thin film transistor disposed on a substrate, an organic layer disposed on the first thin film transistor, a pixel electrode disposed on the organic layer and connected to the first thin film transistor, a partition disposed on the pixel electrode and the organic layer, and an organic emission layer disposed on the pixel electrode and contacting the partition. The partition has an organic layer exposing hole that exposes a portion of the organic layer and an opening that exposes a portion of the pixel electrode.
1. An organic light emitting device, comprising:
a first thin film transistor disposed on a substrate;
an organic layer disposed on the first thin film transistor;
a pixel electrode disposed on the organic layer and connected to the first thin film transistor;
a partition disposed on the pixel electrode and the organic layer, the partition comprising an organic layer exposing hole that exposes a portion of the organic layer and an opening that exposes a portion of the pixel electrode; and
an organic emission layer disposed on the pixel electrode and contacting the partition.
2. The organic light emitting device of claim 1 , further comprising
a color filter disposed between the first thin film transistor and the organic layer.
3. The organic light emitting device of claim 2 , wherein
the pixel electrode comprises at least two electrode pieces that are separated from each other via a gap that exposes a portion of the organic layer, and
the organic layer exposing hole is disposed in the gap.
4. The organic light emitting device of claim 2 , wherein
the organic layer comprises a polyimide-based or a polyacryl-based organic material.
5. The organic light emitting device of claim 2 , wherein
the partition comprises an organic material.
6. The organic light emitting device of claim 5 , wherein
the partition comprises a polyimide-based or a polyacryl-based organic material.
7. The organic light emitting device of claim 2 , further comprising
an inorganic layer disposed between the color filter and the thin film transistor.
8. The organic light emitting device of claim 2 , wherein
a width of the organic layer exposing hole is 10 μm or less.
9. The organic light emitting device of claim 3 , wherein
the at least two electrode pieces are respectively connected to the first thin film transistor.
10. The organic light emitting device of claim 3 , wherein
the pixel electrode further comprises a connection bridge connecting the at least two electrode pieces.
11. The organic light emitting device of claim 2 , wherein
the pixel electrode comprises indium tin oxide or indium zinc oxide.
12. The organic light emitting device of claim 2 , further comprising:
a second thin film transistor connected to the first thin film transistor;
a gate line connected to the second thin film transistor; and
a data line connected to the second thin film transistor.
13. A method for manufacturing an organic light emitting device, comprising:
forming a thin film transistor on a substrate;
forming an organic layer on the thin film transistor;
forming a pixel electrode on the organic layer;
forming a partition having an opening that exposes a portion of the pixel electrode and an organic layer exposing hole that exposes a portion of the organic layer; and
forming an organic emission layer contacting the partition.
14. The method of claim 13 , further comprising
forming a color filter between the thin film transistor and the organic layer.
15. The method of claim 14 , wherein
the pixel electrode comprises at least two electrode pieces.
16. The method of claim 14 , further comprising
performing an annealing process to remove moisture from the organic layer before forming the organic emission layer.
17. The method of claim 16 , wherein
the annealing process comprises annealing at a temperature of 200-230° C.
18. The method of claim 16 , wherein
the annealing process is performed after forming the partition.
19. The method of claim 16 , wherein
the annealing process is performed before forming the pixel electrode.
20. The method of claim 16 , wherein
forming the pixel electrode comprises sputtering indium tin oxide or indium zinc oxide in a sputtering chamber.
21. The method of claim 20 , wherein
the sputtering chamber has a temperature in a range of 200-230° C. when sputtering indium tin oxide or indium zinc oxide.
22. The method of claim 16 , wherein
the organic layer comprises a polyimide-based or a polyacryl-based organic material.
23. The method of claim 16 , wherein
the partition comprises a polyimide-based or a polyacryl-based organic material.
24. The method of claim 16 , further comprising
forming an inorganic layer on the thin film transistor the color filter being disposed on the inorganic layer.