Methods and Devices For Processing A Precursor Layer In a Group VIA Environment
Methods and devices for high-throughput printing of a precursor material for forming a film of a group IB-IIIA-chalcogenide compound are disclosed. In one embodiment, the method comprises forming a precursor layer on a substrate, the precursor is subsequently processed in a VIA environment.
1 . A thin-film absorber formation method.
2 . The method of claim 1 comprising:
forming a precursor layer on a substrate, wherein the precursor layer comprises one or more discrete layers; and
processing the precursor layer in one or more steps to form a thin-film absorber layer, wherein one of the steps includes heating in a group VIA-based environment.
3 . The method of claim 1 wherein a first layer of the one or more discrete layers is formed over a second layer.
4 . The method of claim 1 wherein the forming step occurs by creating vapor from a solid feedstock, wherein solid to vapor creation occurs within a reduced height processing section.
5 . The method of claim 4 wherein the solid feedstock is on a continually moving carrier web.
6 . The method of claim 4 wherein the solid feedstock is at a distance such that vapor formed is condensed onto a substrate opposite the feedstock.
7 . The method of claim 6 wherein the substrate is at a temperature below a temperature required to vaporize the feedstock.
8 . The method of claim 6 wherein the substrate is already coated with one or more precursor layers.
9 . The method of claim 6 wherein the substrate is at least 0.5 meter wide.
10 . The method of claim 6 wherein the substrate is at least 1 meter wide.
11 . The method of claim 6 further comprising using a condenser to recapture group VIA material in the vapor that is not deposited.
12 . The method of claim 6 further comprising using a condenser coupled to a vent or inlet close to the processing zone where group VIA gas is used.
13 . The method of claim 6 further comprising using a condenser coupled to a vent or inlet within to the processing zone where group VIA gas is used.
14 . The method of claim 13 wherein the condenser comprises of a multi-stage condenser with at least a first condensing stage and at least a second condensing stage.
15 . The method of claim 13 wherein the condenser comprises of a multi-stage condenser with ceramic fiber material therein.
16 . The method of claim 13 wherein the condenser comprises has a first stage configured to remove more than 50% of group VIA material from outgassed vapor and a second stage that removes an amount so that at least 95% of original VIA material is removed after two stages.
17 . The method of claim 6 further comprising using a muffle wherein heaters are spaced apart from the muffle by an air gap and not in direct contact with the muffle.
18 . The method of claim 6 wherein group VIA material being deposited is sulfur-based.
19 . The method of claim 6 wherein group VIA material is deposited and heated at a reduced height portion of relative to other portions of the processing system.
20 . The method of claim 6 wherein where group VIA material vapor is present, the processing system has a reduced height portion of relative to other portions of the processing system.
21 . The method of claim 20 wherein the reduced height portion is no more than half of interior chamber portions before or after the reduced height portion.
22 . The method of claim 20 wherein the reduced height portion is no more than 0.9 of interior chamber height of portions before or after the reduced height portion.
23 . The method of claim 20 wherein the reduced height portion is no more than 0.75 of interior chamber height of portions before or after the reduced height portion.
24 . The method of claim 20 wherein the reduced height portion is no more than half of exterior chamber portions before or after the reduced height portion.
25 . The method of claim 20 wherein the reduced height portion is no more than 0.9 of exterior chamber height of portions before or after the reduced height portion.
26 . The method of claim 20 wherein the reduced height portion is no more than 0.75 of exterior chamber height of portions before or after the reduced height portion.