ORGANIC THIN-FILM TRANSISTORS
A thin-film transistor has a semiconducting layer which comprises a halogen-coordinated metal phthalocyanine complex of Formula (I) or Formula (II): wherein M is a trivalent metal atom; each m represents the number of R substituents on the phenyl or naphthyl ring, and is independently an integer from 0 to 6; each R is independently selected from the group consisting of halogen, alkyl, substituted alkyl, alkoxy, substituted alkoxy, phenoxy, phenylthio, aryl, substituted aryl, heteroaryl, —CN, and —NO 2 ; and X is a halogen atom.
1 . A thin-film transistor comprising a semiconducting layer, wherein the semiconducting layer comprises a halogen-coordinated metal phthalocyanine complex of Formula (I) or Formula (II):
wherein M is a trivalent metal atom;
each m represents the number of R substituents on the phenyl or naphthyl ring, and is independently an integer from 0 to 6;
each R is independently selected from the group consisting of halogen, alkyl, substituted alkyl, alkoxy, substituted alkoxy, phenoxy, phenylthio, aryl, substituted aryl, heteroaryl, —CN, and —NO 2 ; and
X is a halogen atom.
2 . The transistor of claim 1 , wherein M is selected from the group consisting of indium, antimony, iron, titanium, manganese, gallium, and aluminum.
3 . The transistor of claim 1 , wherein the halogen-coordinated metal phthalocyanine complex is selected from Formulas (1) to (11):
4 . The transistor of claim 1 , wherein the halogen atom X is chlorine.
5 . The transistor of claim 1 , wherein the trivalent metal atom M is indium, the halogen atom X is chlorine, and each m is zero.
6 . The transistor of claim 1 , wherein the transistor has a mobility of about 0.1 cm 2 /V·sec or greater.
7 . The transistor of claim 1 , wherein the transistor has a current on/off ratio of about 10 4 or greater.
8 . The transistor of claim 1 , wherein the semiconducting layer further comprises a polymer.
9 . The transistor of claim 8 , wherein the polymer is selected from the group consisting of triarylamine polymers, polyindolocarbazole, polycarbazole, polyacenes, polyfluorene, polystyrene, polymethyl methacrylate, poly(vinyl cinnamate), poly(vinyl phenol), polycarbonate, polythiophene, and polythiophene derivatives.
10 . The transistor of claim 1 , further comprising an interfacial layer located between the semiconducting layer and a dielectric layer.
11 . The transistor of claim 10 , wherein the interfacial layer is formed from an alkyltrichlorosilane having from about 4 to about 24 carbon atoms.
12 . The transistor of claim 1 , wherein the halogen-coordinated metal phthalocyanine complex forms a two-dimensional interlocking structure.
13 . A process of preparing a thin film transistor comprising:
depositing a liquid composition onto a substrate to form a semiconducting layer, the liquid composition comprising a solvent, a polymer, and a halogen-coordinated metal phthalocyanine complex of Formula (I) or Formula (II):
wherein M is a trivalent metal atom;
each m represents the number of R substituents on the phenyl or naphthyl ring, and is independently an integer from 0 to 6;
each R is independently selected from the group consisting of halogen, alkyl, substituted alkyl, alkoxy, substituted alkoxy, phenoxy, phenylthio, aryl, substituted aryl, heteroaryl, —CN, and —NO 2 ; and
X is a halogen atom.
14 . The process of claim 13 , wherein the halogen-coordinated metal phthalocyanine complex is partially dissolved in the solvent and partially dispersed in the solvent.
15 . The process of claim 14 , wherein the weight ratio between the dissolved portion and the dispersed portion of the metal phthalocyanine complex is from about 5:95 to about 80:20.
16 . The process of claim 14 , wherein the partially dispersed portion of the halogen-coordinated metal phthalocyanine complex has a particle size of from about 10 nanometers to about 2000 nanometers.
17 . The process of claim 13 , wherein the halogen-coordinated metal phthalocyanine complex and the polymer are dissolved in the solvent.
18 . The process of claim 13 , wherein the solvent is a chlorinated solvent selected from the group consisting of chlorobenzene, dichlorobenzene, trichlorobenzene, and chlorotoluene.
19 . The process of claim 13 , wherein M is selected from the group consisting of indium, antimony, iron, titanium, manganese, gallium, and aluminum.
20 . The process of claim 13 , wherein the polymer is selected from triarylamine polymers, polyindolocarbazole, polycarbazole, polyacenes, polyfluorene, polystyrene, polymethyl methacrylate, poly(vinyl cinnamate), poly(vinyl phenol), polycarbonate, polythiophene, and polythiophene derivatives.