Liquid crystal display device and method of manufacturing the same

1. A liquid crystal display comprising:

a first substrate;

a first conductor arranged on the first substrate;

a first insulating layer arranged on the first substrate and the first conductor;

a second insulating layer arranged on the first insulating layer;

a semiconductor layer arranged on the second insulating layer; and

a second conductor arranged on the second insulating layer, wherein the semiconductor layer comprises an oxide semiconductor and the second conductor comprises a source electrode, a drain electrode, and a storage electrode line.

2. The liquid crystal display of claim 1 , wherein

the first conductor, the first insulating layer, the second insulating layer, the semiconductor layer, the source electrode, and the drain electrode form a thin film transistor; and

the source electrode, the drain electrode, and the storage electrode line are formed of the same layer.

3. The liquid crystal display of claim 2 , wherein the storage electrode line extends non-linearly and in an extension direction of a data line.

4. The liquid crystal display of claim 3 , further comprising:

a passivation layer arranged on the second conductor;

a pixel electrode arranged on the passivation layer; and

a common electrode arranged on a lower surface of a second substrate, the common electrode facing the first substrate,

wherein the common electrode comprises a cutout, and the storage electrode line overlaps with the cutout of the common electrode.

5. The liquid crystal display of claim 4 , further comprising a light blocking film disposed between the first insulating layer and the first substrate and under the storage electrode line, the light blocking film having the same pattern as the storage electrode line.

6. The liquid crystal display of claim 1 , further comprising a buffer layer arranged between the first substrate and the first conductor.

7. The liquid crystal display of claim 1 , wherein a thickness of the first insulating layer is equal to or greater than a thickness of the first conductor.

8. The liquid crystal display of claim 7 , wherein the thickness of the first conductor is in the range of 0.5 μm to 5 μm, and the thickness of the first insulating layer is in the range of 0.5 μm to 5 μm.

9. The liquid crystal display of claim 8 , wherein the dielectric constant of the first insulating layer is less than 3.5.

10. The liquid crystal display of claim 9 , wherein the first insulating layer comprises either an inorganic insulator or an organic insulator.

11. The liquid crystal display of claim 10 , wherein the inorganic insulator comprises at least one of fluorine-doped silicon oxide (SiO 2 F), carbon-doped silicon oxide (SiO 2 C), hydrogen-doped silicon oxide (SiO 2 H), porous silicon oxide (porous SiO 2 ), porous carbon silicon oxide (porous SiO 2 C), and highly porous oxides.

12. The liquid crystal display of claim 10 , wherein the organic insulator comprises at least one of hydrogen silsesquioxane (HSQ), methylsilsesquioxane, polyimide, polynorbornenes, benzocyclobutene, aromatic polymers, vapor-deposited parylene, parylene-F, fluorine doped amorphous carbon, and polytetrafluoroethylene (PTFE).

13. The liquid crystal display of claim 9 , wherein the oxide semiconductor of the semiconductor layer comprises at least one of Zn oxide, Ga oxide, Sn oxide, In oxide, InGaZnO 4 , Zn—In—O, and Zn—Sn—O.

14. The liquid crystal display of claim 1 , wherein the first conductor or the second conductor comprises of aluminum (Al), silver (Ag), and copper (Cu).