Process for forming an organic electronic device including an organic device layer

1. A process of forming an electronic device comprising:

forming an organic device layer comprising a charge-selective material, a radiation sensitizer, and a small molecule photocurable surface-active composition, said layer having a first electrical conductivity and a first surface energy; and

selectively exposing portions of the organic device layer to radiation resulting in exposed areas and unexposed areas, and

applying a development treatment,

wherein the electrical conductivity of the exposed areas of the organic device layer is less than the first electrical conductivity, and the surface energy of the exposed areas of the organic device layer is less than the first surface energy.

2. The process of claim 1 , wherein the charge-selective material is hole-transport material.

3. The process of claim 1 , wherein the photocurable surface-active composition comprises a material selected from the group consisting of a fluorinated ester of an α,β-unsaturated polyacid, a fluorinated imide of an α,β-unsaturated polyacid, and combinations thereof.

4. The process of claim 1 , wherein the polyacid is a polycarboxylic acid.

5. The process of claim 4 , wherein the polyacid is selected from the group consisting of fumaric acid, maleic acid, itaconic acid, 2,2-dimethyl-4-methylenepentanedioic acid, muconic acid, 2-methyleneglutaric acid, acotinic acid, oligomers of methacrylic acid, and combinations thereof.

6. The process of claim 3 , wherein the ester is formed using an alcohol having the formula R f OH, where the carbon atom chain of the R f group has 4-15 carbon atoms, 0-5 oxo oxygen atoms contained within the carbon atom chain, and at least 4 fluorine atoms attached to the carbon atoms of the carbon atom chain, with the proviso that there is no fluorine atom on the carbon atom bearing OH.

7. The process of claim 3 , wherein the imide is formed using an amine having the formula R f NH 2 , where the carbon atom chain of the R f group has 4-15 carbon atoms, 0-5 oxo oxygen atoms contained within the carbon atom chain, and at least 4 fluorine atoms attached to the carbon atoms of the carbon atom chain, with the proviso that there is no fluorine atom on the carbon atom bearing NH 2 .

8. The process of claim 1 , wherein the development treatment comprises heating to a temperature above room temperature.

9. The process of claim 4 , wherein the temperature is in the range of 50° C. to 200° C.

10. The process of claim 1 , wherein the radiation sensitizer is a UV sensitizer and selectively modifying the organic device layer comprises selectively exposing the organic device layer to a wavelength of radiation having a value not greater than 365 nm.

11. The process of claim 1 , wherein selectively modifying the organic device layer is performed at a peak intensity of at least 1 J/cm 2 at a surface within the first portion of the organic device layer.

12. The process of claim 1 , wherein the exposing to radiation is carried out in air.