Method of manufacturing liquid crystal display

1. A method of manufacturing a liquid crystal display, comprising:

disposing a thin film transistor including an output terminal on a first substrate;

disposing a pixel electrode in connection with the output terminal;

disposing an inorganic layer on the pixel electrode; and

converting the inorganic layer to a first alignment layer by disposing a mask on the inorganic layer and radiating an ion beam thereto,

wherein a distance between the inorganic layer and the mask is about 20 μm to about 100 μm when radiating the ion beam.

2. The method of claim 1 , wherein the converting of the inorganic layer to a first alignment layer comprises:

dividing the first alignment layer into a plurality of stripe regions comprising first and second stripe regions and radiating the ion beam to the first stripe region in a first direction; and

radiating the ion beam to the second stripe region adjacent to the first stripe region in a second direction substantially opposite to the first direction.

3. The method of claim 2 , wherein the first stripe region and the second stripe region are formed within one pixel.

4. The method of claim 2 , wherein the first stripe region and the second stripe region are formed in different pixels, respectively.

5. The method of claim 1 , wherein, in the converting of the inorganic layer to a first alignment layer, an incident angle of the ion beam is about 60° to about 85° with respect to the first substrate.

6. The method of claim 5 , wherein, in the converting of the inorganic layer to a first alignment layer, energy of the ion beam is about 50 eV to about 70 eV, and flux density of the ion beam is about 2.5×10 13 Ar + /sec.cm 2 to about 3.12×10 13 Ar + /sec.cm 2 .

7. The method of claim 5 , wherein, in the disposing of an inorganic layer on the pixel electrode, the inorganic layer is deposited using a high frequency magnetron sputtering method, and the deposition temperature thereof is about 75° C. to about 300° C.

8. The method of claim 7 , wherein a thickness of the inorganic layer is about 50 nm.

9. The method of claim 8 , wherein the inorganic layer comprises one of silicon oxide and silicon nitride.

10. The method of claim 1 , wherein the ion beam source is a CHC type ion beam source.

11. The method of claim 1 , wherein the ion beam comprises argon ions.

12. The method of claim 2 , further comprising:

disposing a common electrode on a second substrate disposed substantially opposite to the first substrate;

disposing an inorganic layer on the common electrode;

converting the inorganic layer to a second alignment layer by radiating an ion beam thereto; and

disposing a liquid crystal layer between the first alignment layer and the second alignment layer.

13. The method of claim 12 , wherein the converting of the inorganic layer to the second alignment layer comprises:

dividing the second alignment layer into a plurality of stripe regions comprising third and fourth stripe regions, and radiating an ion beam to the third stripe region in a third direction; and

radiating an ion beam to the fourth stripe region adjacent to the third stripe region in a fourth direction substantially opposite to the third direction.

14. The method of claim 13 , wherein the third stripe region and the fourth stripe region are formed within one pixel.

15. The method of claim 13 , wherein the third stripe region and the fourth stripe region are formed in different pixels, respectively.

16. The method of claim 12 , wherein the liquid crystal layer comprises a plurality of domains including at least left upper, left lower, right upper, and right lower domains.

17. The method of claim 1 , wherein a distance between the inorganic layer and the mask is about 20 μm to about 50 μm when radiating the ion beam.

18. The method of claim 1 , wherein the mask has an opening through which the ion beam passes, and a width of the opening is about 100 μm to about 2000 μm.

19. The method of claim 18 , wherein the mask is made of one of stainless steel and aluminum.