Granted Patent B2

US 7,868,186 · App. 12/334,858 · Granted Jan 11, 2011

Abstract

Claims (25)

1. An electronic device comprising a polymer, the polymer comprising at least one repeat unit, the repeat unit comprising at least one optionally substituted indolocarbazole moiety and at least one divalent linkage;

wherein the at least one optionally substituted indolocarbazole moiety has at least one internal aromatic ring and two terminal aromatic rings, and the at least one divalent linkage is connected to one of the two terminal aromatic rings; and

wherein a backbone of the polymer runs through the two terminal rings of the at least one optionally substituted indolocarbazole moiety and through the at least one divalent linkage.

2. The electronic device of claim 1 , wherein the number of optionally substituted indolocarbazole moieties in the repeat unit ranges from 1 to 6; and the number of divalent linkages in the repeat unit ranges from 1 to 3.

3. The electronic device of claim 1 , wherein the at least one divalent linkage is conjugated.

4. The electronic device of claim 1 , wherein the polymer contains only one repeat unit, and the repeat unit consists of only one optionally substituted indolocarbazole moiety and only one divalent linkage.

5. The electronic device of claim 1 , wherein the at least one optionally substituted indolocarbazole moiety is independently selected from the structures (A), (B), (C), (D), (E), (F) and (G):

wherein for each of the structures (A) through (G), each R is independently selected from the group consisting of hydrogen, an alkyl group, a cyclic aliphatic group, an aryl group, an alkylaryl group, an arylalkyl group, and a heteroatom-containing group.

6. The electronic device of claim 1 , wherein the at least one divalent linkage is independently selected from the group consisting of the following structural units which are optionally substituted:

and a combination thereof,

wherein X is selected from the group consisting of C(R′R″), O, S, Se, NR′, and Si(R′R″), and wherein R′ and R″ are independently selected from the group consisting of an alkyl group, a cyclic aliphatic group, an aryl group, an alkylaryl group, an arylalkyl group, a heteroatom-containing group, a halogen and a mixture thereof; and Y is a carbon atom or a nitrogen atom.

7. The electronic device of claim 1 , wherein the electronic device comprises a thin film transistor, wherein the thin film transistor comprises a semiconductor layer including the polymer.

8. The electronic device of claim 1 , wherein the repeat unit repeats from 2 to about 2,000 times.

9. An electronic device of claim 1 comprising a polymer, wherein the polymer is selected from the group consisting of:

and a mixture thereof,

wherein n is the number of repeat units.

10. An electronic device comprising a polymer, the polymer comprising at least one repeat unit, the repeat unit comprising at least one optionally substituted indolocarbazole moiety and at least one divalent linkage, wherein the at least one divalent linkage comprises one or more optionally substituted thienylene units.

11. The electronic device of claim 10 , wherein the number of optionally substituted indolocarbazole moieties in the repeat unit ranges from 1 to 6; and the number of divalent linkages in the repeat unit ranges from 1 to 3.

12. The electronic device of claim 10 , wherein the at least one divalent linkage is conjugated.

13. The electronic device of claim 10 , wherein the polymer has only one repeat unit, and wherein the repeat unit consists of only one optionally substituted indolocarbazole moiety and only one divalent linkage.

14. The electronic device of claim 10 , wherein the at least one optionally substituted indolocarbazole moiety is independently selected from the structures (A), (B), (C), (D), (E), (F) and (G):

wherein for each of the structures (A) through (G), each R is independently selected from a group consisting of hydrogen, an alkyl group, a cyclic aliphatic group, an aryl group, an alkylaryl group, an arylalkyl group, and a heteroatom-containing group, wherein each of the structures (A) through (G) is optionally peripherally substituted.

15. The electronic device of claim 10 , wherein the electronic device comprises a thin film transistor, wherein the thin film transistor comprises a semiconductor layer including the polymer.

16. An electronic device comprising a polymer, the polymer having the structure of either Formula (13) or (14):

wherein n is the number of repeat units and is from 2 to about 2,000.

Assignments (9)