Back illuminated sensor with low crosstalk

1. A back-illuminated image sensor, comprising:

a sensor layer having a frontside and a backside opposite the frontside;

an insulating layer adjacent the backside;

a circuit layer adjacent the frontside;

a plurality of photodetectors of a first type conductivity for converting light incident on the backside into photo-generated charges, the photodetectors having a depletion region, wherein the plurality of photodetectors are disposed in the sensor layer adjacent the frontside;

a region of a second type conductivity formed in at least a portion of the sensor layer adjacent the frontside and connected to a voltage terminal for biasing the second type conductivity region at a predetermined voltage;

a well of the second type conductivity formed in the sensor layer adjacent the backside; and

trench isolations in the sensor layer starting at the frontside and extending beyond the depletion region of the photodetectors and to portions of the insulating laver, wherein the trench isolations include portions that do not extend to the insulating layer so as to connect the well at the backside between adjacent photodetectors; and

a lining of the second type conductivity lining the trench isolations, wherein the lining electrically connects the region of the second type conductivity adjacent the frontside with the well adjacent the backside.

2. The back-illuminated image sensor of claim 1 , wherein the first type conductivity is positive.

3. The back-illuminated image sensor of claim 1 , wherein the second type conductivity is negative.

4. The back-illuminated image sensor of claim 1 , wherein the photodetectors are formed in a p-epi substrate.

5. The back-illuminated image sensor of claim 1 , wherein the region of the second type conductivity formed in at least a portion of the sensor layer adjacent the frontside is an n-well.

6. A method for producing a back-illuminated image sensor, comprising:

providing a sensor layer having a frontside and a backside opposite the frontside;

situating an insulating layer adjacent the backside;

situating a circuit layer adjacent the frontside;

providing a plurality of photodetectors of a first type conductivity for converting light incident on the backside into photo-generated charges, the photodetectors having a depletion region, wherein the plurality of photodetectors are disposed in the sensor layer adjacent the frontside;

forming a region of a second type conductivity in at least a portion of the sensor layer adjacent the frontside;

biasing the second type conductivity region at a predetermined voltage;

forming a well of the second type conductivity in the sensor layer adjacent the backside; and

providing trench isolations in the sensor layer starting at the frontside and extending beyond the depletion region of the photodetectors and to portions of the insulating layer, wherein the trench isolations include portions that do not extend to the insulating layer so as to connect the well at the backside between adjacent photodetectors; and

providing a lining of the second type conductivity lining the trench isolations, wherein the lining electrically connects the region of the second type conductivity adjacent the frontside with the well adjacent the backside.

7. The method of claim 6 , wherein the first type conductivity is positive.

8. The method of claim 6 , wherein the second type conductivity is negative.

9. An image capture device, comprising:

a lens configured to receive light;

a back-illuminated image sensor including:

a sensor layer having a frontside and a backside opposite the frontside;

an insulating layer adjacent the backside;

a circuit layer adjacent the frontside;

a plurality of photodetectors of a first type conductivity for converting light from the lens incident on the backside into photo-generated charges, the photodetectors having a depletion region, wherein the plurality of photodetectors are disposed in the sensor layer adjacent the frontside;

a region of a second type conductivity formed in at least a portion of the sensor layer adjacent the frontside and connected to a voltage terminal for biasing the second type conductivity region at a predetermined voltage;

a well of the second type conductivity formed in the sensor layer adjacent the backside; and

trench isolations in the sensor layer starting at the frontside and extending beyond the depletion region of the photodetectors and to portions of the insulating layer. wherein the trench isolations include portions that do not extend to the insulating layer so as to connect the well at the backside between adjacent photodetectors; and

a lining of the second type conductivity lining the trench isolations, wherein the lining electrically connects the region of the second type conductivity adjacent the frontside with the well adjacent the backside.

10. The image capture device of claim 9 , wherein the first type conductivity is positive.

11. The image capture device of claim 9 ,wherein the second type conductivity is negative.

12. The image capture device of claim 9 , wherein the photodetectors are formed in a p-epi substrate.

13. The image capture device of claim 9 , wherein the region of the second type conductivity formed in at least a portion of the sensor layer adjacent the frontside is an n-well.