Semiconductor device having an inorganic coating layer applied over a junction termination extension

1. A semiconductor device, comprising:

a substrate;

a contact adjacent said substrate;

a junction termination extension adjacent said contact;

an inorganic coating layer applied to at least a portion of said contact to at least partially cover said junction termination extension, said contact in direct communication with said substrate without interruption by said inorganic coating layer.

2. The semiconductor device as recited in claim 1 , wherein said substrate includes a Silicon carbide (SiC) substrate.

3. The semiconductor device as recited in claim 1 , wherein said substrate includes a blocking layer.

4. The semiconductor device as recited in claim 1 , wherein said substrate includes an n-type blocking layer.

5. The semiconductor device as recited in claim 1 , wherein said substrate includes a p-type blocking layer.

6. The semiconductor device as recited in claim 1 , wherein said junction termination extension is embedded within said substrate.

7. The semiconductor device as recited in claim 6 , wherein said contact directly communicates with said junction termination extension without interruption by said inorganic coating layer.

8. The semiconductor device as recited in claim 1 , wherein said junction termination extension is formed along an outer periphery of the semiconductor device.

9. The semiconductor device as recited in claim 8 , wherein said inorganic coating layer extends around an edge of said substrate.

10. The semiconductor device as recited in claim 1 , wherein said inorganic coating layer extends around an edge of said substrate.

11. The semiconductor device as recited in claim 1 , wherein said inorganic coating layer is Hafnium Oxide.

12. The semiconductor device as recited in claim 1 , wherein an anode directly communicates with said contact.

13. The semiconductor device as recited in claim 12 , wherein a cathode directly communicates with an ohmic contact adjacent said substrate.

14. The semiconductor device as recited in claim 1 , wherein said substrate includes an epilayer, and wherein said contact is in direct communication with said epilayer.

15. The semiconductor device as recited in claim 1 , wherein said semiconductor device is a Schottky barrier diode, and a Schottky barrier is formed between said contact and said substrate.

16. An integrated circuit chip comprising:

a semiconductor device;

a contact on a top surface of said semiconductor device;

a junction termination extension formed adjacent an outer periphery of said semiconductor device;

an inorganic coating layer which at least partially covers said junction termination extension; and

wherein said contact directly communicates with said semiconductor device without interruption by said inorganic coating layer.

17. The integrated circuit chip as recited in claim 16 , wherein said inorganic coating layer extends around an edge of an epilayer supported on a substrate.

18. The integrated circuit chip as recited in claim 17 , wherein said junction termination extension is embedded within said epilayer.

19. The integrated circuit chip as recited in claim 16 , wherein said inorganic coating layer is Hafnium Oxide.

20. The semiconductor device as recited in claim 16 , wherein said semiconductor device is a Schottky barrier diode, and a Schottky barrier is formed between said contact and said semiconductor device.