METHOD OF PATTERNING CONDUCTIVE LAYER AND DEVICES MADE THEREBY
Methods for patterning a conductor through oxidation are provided. Devices fabricated using the method include organic transistors having a gate electrode and dielectric layer patterned by the method, source and drain electrodes, and an organic semiconducting layer.
1 . A method for forming a patterned aluminum layer on a substrate comprising:
(a) providing an aluminum layer on a substrate;
(b) oxidizing a portion of the aluminum layer to provide an aluminum oxide layer and a residual aluminum layer, the aluminum oxide layer being disposed over the residual aluminum layer;
(c) forming a patterned resist layer over the aluminum oxide layer, wherein a portion of the aluminum oxide layer is exposed through the patterned resist layer; and
(d) oxidizing a portion of the residual aluminum layer that is beneath the portion of the aluminum oxide layer exposed through the patterned resist layer to provide a patterned aluminum layer substantially covered by aluminum oxide.
2 . The method of claim 1 wherein providing an aluminum layer on a substrate comprises depositing aluminum on the substrate using a thin-film technique selected from the group consisting of electron beam deposition and sputtering.
3 . The method of claim 1 wherein the substrate comprises a flexible substrate.
4 . The method of claim 1 wherein oxidizing a portion of the aluminum layer and oxidizing the residual aluminum layer comprise an oxidation method independently selected from the group consisting of thermal oxidation and plasma oxidation.
5 . The method of claim 1 , further comprising forming an organic semiconductor layer over the patterned aluminum layer substantially covered by aluminum oxide.
6 . The method of claim 1 , wherein the patterned aluminum layer includes at least one feature selected from the group consisting of an organic thin film transistor gate electrode and an interconnect.
7 . A method for forming a patterned conductive layer on a substrate comprising:
(a) providing a conductive layer on a substrate;
(b) oxidizing a portion of the conductive layer to provide a dielectric layer and a residual conductive layer, the dielectric layer being disposed over the residual conductive layer;
(c) forming a patterned resist layer over the dielectric layer, wherein a portion of the dielectric layer is exposed through the patterned resist layer; and
(d) oxidizing a portion of the residual conductive layer that is beneath the portion of the dielectric layer exposed through the patterned resist layer to provide a patterned conductive layer substantially covered by dielectric.
8 . The method of claim 7 wherein the conductive layer is selected from the group consisting of aluminum, silver, and zinc.
9 . The method of claim 7 wherein the substrate comprises a flexible substrate.
10 . The method of claim 7 wherein oxidizing a portion of the conductive layer and oxidizing the residual conductive layer comprise an oxidation method independently selected from the group consisting of thermal oxidation and plasma oxidation.
11 . The method of claim 7 , further comprising forming an organic semiconductor layer over the patterned conductive layer substantially covered by dielectric.
12 . The method of claim 7 wherein the patterned conductive layer includes at least one feature selected from the group consisting of an organic thin film transistor gate electrode and an interconnect.
13 . A method for fabricating a transistor comprising:
(a) providing an aluminum layer on a substrate;
(b) oxidizing a portion of the aluminum layer to provide an aluminum oxide layer and a residual aluminum layer, the aluminum oxide layer being disposed over the residual aluminum layer;
(c) forming a patterned resist layer over the aluminum oxide layer, wherein a portion of the aluminum oxide layer is exposed through the patterned resist layer;
(d) oxidizing a portion of the residual aluminum layer that is beneath the portion of the aluminum oxide layer exposed through the patterned resist layer to provide a patterned aluminum layer substantially covered by aluminum oxide, wherein the patterned aluminum layer comprises a gate electrode covered at least in part by the aluminum oxide layer;
(e) forming a source electrode and a drain electrode on the aluminum oxide layer; and
(f) forming a semiconductor layer at least intermediate the source electrode and the drain electrode and on the aluminum oxide layer.
14 . The method of claim 13 wherein the source electrode and drain electrode are a material independently selected from the group consisting of a metal and an organic conductor.
15 . The method of claim 13 wherein forming a source electrode and a drain electrode are independently selected from the group consisting of metal deposition methods and inkjet printing.
16 . The method of claim 13 wherein forming a semiconductor layer comprises forming an organic semiconductor layer.
17 . The method of claim 13 wherein the patterned aluminum layer further comprises at least one interconnect.
18 . The method of claim 13 wherein the substrate comprises a flexible substrate.
19 . The method of claim 13 wherein oxidizing a portion of the aluminum layer and oxidizing the residual aluminum layer comprise an oxidation method independently selected from the group consisting of thermal oxidation and plasma oxidation.
20 . The method of claim 13 , further comprising forming an encapsulation layer covering the source electrode, drain electrode, and semiconductor layer.