Structure formation using metal deposited on a RIE-able seedlayer
View Patent ↗Methods for fabricating a device component are provided. A substrate comprising a RIE stop layer, an oxide layer formed on the RIE stop layer, and a RIE-able layer formed on the oxide layer may be provided. A resist layer may be patterned on the RIE-able layer. A metal layer may be formed on portions of the RIE-able layer that are not covered by the resist layer. The resist layer may be removed and an RIE performed to remove exposed portions of the RIE-able layer and portions of the oxide layer beneath the exposed portions of the RIE-able layer. Thereafter, the metal layer may be removed, and the component may be formed in an opening in the oxide layer formed during the RIE.
1. A method for fabricating a component, comprising:
providing a substrate comprising a Reactive Ion Etching (RIE) stop layer, an oxide layer formed on the RIE stop layer, and a Reactive Ion Etchable (RIE-able) layer formed on the oxide layer, wherein the RIE stop layer comprises any one of Aluminum, Nickel-Iron (NiFe), Nickel-Phosphide, and Ruthenium;
patterning a resist layer on the RIE-able layer;
forming a metal layer on portions of the RIE-able layer that are not covered by the resist layer via electrodeposition;
removing the resist layer, wherein removing the resist layer exposes a portion of the RIE-able layer;
performing RIE to remove exposed portions of the RIE-able layer and portions of the oxide layer beneath the exposed portions of the RIE-able layer;
removing the metal layer; and
forming the component in an opening in the oxide layer formed during the RIE.
2. The method of claim 1 , wherein the RIE-able layer comprises Molybdenum.
3. The method of claim 1 , wherein the oxide layer comprises silicon dioxide.
4. The method of claim 1 , wherein the metal layer comprises any one of Nickel, an alloy of Iron, and an alloy of Cobalt.
5. The method of claim 1 , further comprising removing remaining portions of the RIE-able layer.
6. The method of claim 1 , wherein the RIE stop layer is exposed during the RIE.
7. The method of claim 1 , wherein the RIE is performed using a fluorine based plasma.
8. The method of claim 1 , wherein the component forms a part of an integrated circuit.
9. A method for fabricating a coil structure of a magnetic head, comprising:
providing a substrate comprising a Reactive Ion Etching (RIE) stop layer, an oxide layer formed on the RIE stop layer, and a Reactive Ion Etchable (RIE-able) layer formed on the oxide layer, wherein the RIE stop layer comprises any one of Aluminum, Nickel-Iron (NiFe), Nickel-Phosphide, and Ruthenium;
patterning a resist layer on the RIE-able layer;
forming a metal layer on portions of the RIE-able layer that are not covered by the resist layer via electrodeposition;
removing the resist layer, wherein removing the resist layer exposes a portion of the RIE-able layer;
performing RIE to remove exposed portions of the RIE-able layer and portions of the oxide layer beneath the exposed portions of the RIE-able layer;
removing the metal layer; and
depositing a metal in an opening in the oxide layer formed during the RIE, wherein the metal deposited in the opening in the oxide layer forms the coil.
10. The method of claim 9 , wherein the RIE-able layer comprises Molybdenum.
11. The method of claim 9 , wherein the oxide layer comprises silicon dioxide.
12. The method of claim 9 , wherein the metal layer comprises any one of Nickel, an alloy of Iron, and an alloy of Cobalt.
13. The method of claim 9 , further comprising removing remaining portions of the RIE-able seed layer.
14. The method of claim 9 , wherein the RIE stop layer is exposed during the RIE.
15. The method of claim 9 , wherein the RIE is performed using a fluorine based plasma.
16. A method for fabricating a magnetic pole of a magnetic head, comprising:
providing a substrate comprising a Reactive Ion Etching (RIE) stop layer, an oxide layer formed on the RIE stop layer, and a Reactive Ion Etchable (RIE-able) layer formed on the oxide layer, wherein the RIE stop layer comprises any one of Aluminum, Nickel-Iron (NiFe), Nickel-Phosphide, and Ruthenium;
patterning a resist layer on the RIE-able layer;
forming a metal layer on portions of the RIE-able layer that are not covered by the resist layer via electrodeposition;
removing the resist layer, wherein removing the resist layer exposes a portion of the RIE-able layer;
performing RIE to remove exposed portions of the RIE-able layer and portions of the oxide layer beneath the exposed portions of the RIE-able layer;
removing the metal layer; and
depositing a magnetic material in an opening in the oxide layer formed during the RIE, wherein the magnetic material deposited in the opening in the oxide layer forms the magnetic pole.
17. The method of claim 16 , wherein the RIE-able layer comprises Molybdenum.
18. The method of claim 16 , wherein the oxide layer comprises silicon dioxide.
19. The method of claim 16 , wherein the metal layer comprises any one of Nickel, an alloy of Iron, and an alloy of Cobalt.
20. The method of claim 16 , further comprising removing remaining portions of the RIE-able seed layer.
21. The method of claim 16 , wherein the RIE stop layer is exposed during the RIE.
22. The method of claim 16 , wherein the RIE is performed using a fluorine based plasma.