IP Library Granted Patent US 7,952,091
Granted Patent B2
US 7,952,091 · App. 12/347,438 · Granted May 31, 2011

Organic thin film transistor and method of manufacturing the same

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Quick Facts
Patent No.
US 7,952,091
App. No.
12/347,438
Granted
May 31, 2011
Kind
B2
Abstract

Disclosed are an organic thin film transistor and a method of manufacturing the same. The organic thin film transistor includes a gate electrode, an insulating layer, an organic semiconductor layer, a protective layer, and source and drain electrodes. The insulating layer is on the gate electrode, and the organic semiconductor layer is on the insulating layer. The protective layer is on the organic semiconductor layer, and includes an electrode pattern part to expose the organic semiconductor layer. The source and drain electrodes are in the electrode pattern part and connected to the organic semiconductor layer.

Claims (14)

1. An organic thin film transistor, comprising:

a gate electrode;

an insulating layer on the gate electrode;

an organic semiconductor layer on the insulating layer;

a protective layer on the organic semiconductor layer, the protective layer comprising an electrode pattern part to expose the organic semiconductor layer; and

a source electrode and a drain electrode in the electrode pattern part and connected to the organic semiconductor layer, wherein the protective layer further comprises an interconnection pattern part branching from the electrode pattern part.

2. The organic thin film transistor of claim 1 , wherein the protective layer comprises an acryl-based polymer.

3. The organic thin film transistor of claim 2 , wherein the interconnection pattern part has a step difference with respect to the electrode pattern part.

4. The organic thin film transistor of claim 2 , further comprising an interconnection on the interconnection pattern part, the interconnection being connected to the source electrode and the drain electrode.

5. The organic thin film transistor of claim 4 , wherein the source electrode, the drain electrode, and the interconnection comprise a conductive ink.

6. The organic thin film transistor of claim 5 , wherein the organic semiconductor layer and the protective layer comprise a hydrophilic material and a hydrophobic material, respectively.

7. The organic thin film transistor of claim 1 , further comprising a collector electrode connected to the organic semiconductor layer.

8. The organic thin film transistor of claim 7 , wherein the collector electrode is arranged at opposite sides of the drain electrode to face the source electrode.

9. The organic thin film transistor of claim 1 , further comprising an overcoating layer on the source electrode and the drain electrode.

Assignments (3)
CHANGE OF NAME Recorded Aug 28, 2012
From: SAMSUNG ELECTRONICS CO., LTD.
To: SAMSUNG DISPLAY CO., LTD.
Reel/Frame 028863/0810 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 20, 2011
From: JANG, SEON-PIL; SHIN, JUNG-HAN; YOON, MIN-HO; NOH, JUNG-HUN
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 026157/0298 →
EMPLOYMENT AGREEMENT Recorded Apr 20, 2011
From: SHIN, SEONG-SIK
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 026159/0423 →