Electrochromic device and method for making electrochromic device
View Patent ↗A method for lithiating an electrochromic device comprise forming a first transparent conductive layer on a substrate, forming an electrochromic structure on the first transparent conductive layer, forming a second transparent conductive layer on the electrochromic structure, and lithiating the electrochromic structure through the second transparent conductive layer. In one exemplary embodiment lithiating the electrochromic structure comprises lithiating the electrochromic structure at a temperature range of between about room temperature and about 500 C for the duration of the lithiation process. In another exemplary embodiment, lithiating the electrochromic structure further comprises lithiating the electrochromic structure by using at least one of sputtering, evaporation, laser ablation and exposure to a lithium salt. The electrochromic device can be configured in either a “forward” or a “reverse” stack configuration.
1. A method, comprising:
forming a first transparent conductive layer on a substrate;
forming an electrochromic structure on the first transparent conductive layer;
forming a second transparent conductive layer on the electrochromic structure, the second transparent conductive layer comprising a transparent conductive oxide; and
lithiating the electrochromic structure through the second transparent conductive layer by passing lithium through the second transparent conductive layer.
2. The method according to claim 1 , wherein the electrochromic structure comprises a first side and a second side, and a counter electrode (CE) formed on the first side and an electrochromic (EC) electrode formed on the second side, the first side of the electrochromic structure being formed on the first transparent conductive layer, and the second transparent conductive layer being formed on the second side of the electrochromic structure, and
wherein lithiating the electrochromic structure through the second transparent conductive layer comprises lithiating the electrochromic (EC) electrode of the electrochromic structure.
3. The method according to claim 2 , wherein the electrochromic structure further comprises an ion conductor (IC) layer between the counter electrode (CE) and the electrochromic (EC) electrode,
the method further comprising directly lithiating at least one of the counter electrode (CE) and the ion conductor (IC) layer.
4. The method according to claim 1 , wherein the electrochromic structure comprises a first side and a second side, and an electrochromic (EC) electrode formed on the first side and a counter electrode (CE) formed on the second side, the first side of the electrochromic structure being formed on the first transparent conductive layer, and the second transparent conductive layer being formed on the second side of the electrochromic structure, and
wherein lithiating the electrochromic structure through the second transparent conductive layer comprises lithiating the counter electrode (CE) of the electrochromic structure.
5. The method according to claim 4 , wherein the electrochromic structure further comprises an ion conductor (IC) layer between the electrochromic layer (EC) and the counter electrode (CE),
the method further comprising directly lithiating at least one of the electrochromic (EC) electrode and the ion conductor (IC) layer.
6. The method according to claim 1 , wherein lithiating the electrochromic structure comprises lithiating the electrochromic structure at a temperature range of between about room temperature and about 500 C for the duration of the lithiation process.
7. The method according to claim 6 , wherein lithiating the electrochromic structure further comprises lithiating the electrochromic structure by using at least one of sputtering, evaporation, laser ablation and exposure to a lithium salt.
8. An electrochromic device formed by a method comprising:
forming a first transparent conductive layer on a substrate;
forming an electrochromic structure on the first transparent conductive layer;
forming a second transparent conductive layer on the electrochromic structure, the second transparent conductive layer comprising a transparent conductive oxide; and
lithiating the electrochromic structure through the second transparent conductive layer by passing lithium through the second transparent conductive layer.
9. The electrochromic device according to claim 8 , wherein the electrochromic structure comprises a first side and a second side, and a counter electrode (CE) formed on the first side and an electrochromic (EC) electrode formed on the second side, the first side of the electrochromic structure being formed on the first transparent conductive layer, and the second transparent conductive layer being formed on the second side of the electrochromic structure, and
wherein lithiating the electrochromic structure through the second transparent conductive layer comprises lithiating the electrochromic (EC) electrode of the electrochromic structure.
10. The electrochromic device according to claim 9 , wherein the electrochromic structure further comprises an ion conductor (IC) layer between the counter electrode (CE) and the electrochromic (EC) electrode,
the method forming the electrochromic device further comprising directly lithiating at least one of the counter electrode (CE) and the ion conductor (IC) layer.
11. The electrochromic device according to claim 8 , wherein the electrochromic structure comprises a first side and a second side, and an electrochromic (EC) electrode formed on the first side and a counter electrode (CE) formed on the second side, the first side of the electrochromic structure being formed on the first transparent conductive layer, and the second transparent conductive layer being formed on the second side of the electrochromic structure, and
wherein lithiating the electrochromic structure through the second transparent conductive layer comprises lithiating the counter electrode (CE) of the electrochromic structure.
12. The electrochromic device according to claim 11 , wherein the electrochromic structure further comprises an ion conductor (IC) layer between the electrochromic layer (EC) and the counter electrode (CE),
the method forming the electrochromic device further comprising directly lithiating at least one of the electrochromic (EC) electrode and the ion conductor (IC) layer.
13. The electrochromic device according to claim 8 , wherein lithiating the electrochromic structure comprises lithiating the electrochromic structure at a temperature range of between about room temperature and about 500 C for the duration of the lithiation process.
14. The electrochromic device according to claim 13 , wherein lithiating the electrochromic structure further comprises lithiating the electrochromic structure by using at least one of sputtering, evaporation, laser ablation and exposure to a lithium salt.
15. The electrochromic device according to claim 8 , wherein the electrochromic device is part of an Insulated Glass Unit (IGU), and wherein a percentage transmission of the electrochromic device in a bleached state is greater than or equal to about 65% at a wavelength of about 600 nm.
16. The electrochromic device according to claim 8 , wherein a percentage transmission of the electrochromic device in a colored state is less than or equal to about 5% over a wavelength range of about 380 nm to about 1050 nm.
17. The electrochromic device according to claim 8 , wherein the second transparent conductive layer comprises indium tin oxide (ITO), aluminum zinc oxide (AZO), fluorine-doped tin oxide (FTO), antimony-doped tin oxide (ATO), or fluorine-doped aluminum oxide (FAO).
18. The electrochromic device according to claim 1 , wherein the second transparent conductive layer comprises indium tin oxide (ITO), aluminum zinc oxide (AZO), fluorine-doped tin oxide (FTO), antimony-doped tin oxide (ATO), or fluorine-doped aluminum oxide (FAO).