Display apparatus and manufacturing method thereof
View Patent ↗A display apparatus includes a gate electrode, a first insulating layer pattern formed over the gate electrode, a second insulating layer pattern formed over the first insulating layer pattern, exposing a portion of the first insulating layer, a semiconductor film pattern formed over the second insulating layer pattern and over the first insulating layer pattern, an impurity-doped semiconductor film pattern formed on the semiconductor film pattern, wherein the impurity-doped semiconductor film pattern contacts the top surface of the semiconductor film pattern and exposes a portion of the semiconductor film pattern formed over the gate electrode, a source electrode and a drain electrode each formed over a portion of the impurity doped semiconductor film pattern, a protection film pattern formed over the source electrode and the drain electrode in a TFT area, the protection film pattern having a contact hole over the drain electrode, a pixel electrode pattern formed on the protection film pattern and_electrically connected to the drain electrode.
1. A display apparatus, comprising:
a gate electrode;
a first insulating layer pattern formed over the gate electrode;
a second insulating layer pattern formed over the first insulating layer pattern and having a gap positioned over the gate electrode, there being no second insulating layer pattern in the gap;
a semiconductor film pattern formed over the second insulating layer pattern and the first insulating layer pattern;
an impurity-doped semiconductor film pattern formed on the semiconductor film pattern, wherein the impurity-doped semiconductor film pattern contacts the top surface of the semiconductor film pattern and has an opening that extends to the semiconductor film pattern formed over the gate electrode;
a source electrode and a drain electrode each formed over a portion of the impurity doped semiconductor film pattern;
a protection film pattern formed over the source electrode and the drain electrode in a TFT area, the protection film pattern having a contact hole over the drain electrode;
a pixel electrode pattern formed on the protection film pattern and electrically connected to the drain electrode.
2. The display apparatus of claim 1 , further comprising
a storage line formed simultaneously with the gate electrode.
3. The display apparatus of claim 1 , wherein the gate electrode comprises two metal films.
4. The display apparatus of claim 3 , wherein the first metal film comprises an Al or Al-alloy.
5. The display apparatus of claim 3 , wherein the second metal film comprises a refractory metal.
6. The display apparatus of claim 2 , wherein the storage line overlaps a data line and the pixel electrode.
7. The display apparatus of claim 6 , wherein the storage line is located between two adjacent gate lines.
8. A display apparatus, comprising:
a gate electrode;
a first insulating layer pattern formed over the gate electrode and having a gap positioned over the gate electrode, there being no first insulating layer pattern in the gap;
a second insulating layer pattern formed over the first insulating layer pattern;
a semiconductor film pattern formed over the first insulating layer pattern and over the second insulating layer pattern;
an impurity-doped semiconductor film pattern formed on the semiconductor film pattern, wherein the impurity doped semiconductor film pattern contacts the top surface of the semiconductor film pattern and has an opening that extends to the semiconductor film pattern formed over the gate electrode;
a source electrode and a drain electrode formed over a portion of the impurity-doped semiconductor film pattern;
a protection film pattern formed over the source electrode and the drain electrode in a TFT area, the protection film pattern having a contact hole over the drain electrode;
a pixel electrode pattern formed on the protection film pattern and electrically connected to the drain electrode.
9. The display apparatus of claim 8 , further comprising
a storage line formed simultaneously with the gate.
10. The display apparatus of claim 8 , wherein the gate electrode comprises two metal films.
11. The display apparatus of claim 10 , wherein the first metal film comprises an Al or Al-alloy.
12. The display apparatus of claim 10 , wherein the second metal film comprises a refractory metal.
13. The display apparatus of claim 8 , wherein the storage line overlaps a data line and the pixel electrode.
14. The display apparatus of claim 13 , wherein the storage line is located between two adjacent gate lines.