Semiconductor device and power supply device using the same
View Patent ↗A semiconductor device capable of reducing an inductance is provided. In the semiconductor device in which a rectification MOSFET, a commutation MOSFET, and a driving IC that drives these MOSFETs are mounted on one package, the rectification MOSFET, a metal plate, and the commutation MOSFET are laminated. A current of a main circuit flows from a back surface of the package to a front surface thereof. The metal plate is connected to an output terminal via a wiring in the package. Wire bondings are used for wirings for connecting the driving IC, the rectification MOSFET, and the commutation MOSFET, all terminals being placed on the same plane. For this reason, the inductance becomes small and also a power source loss and a spike voltage are reduced.
1. A semiconductor device for a DC/DC converter, comprising:
a rectification MOSFET;
a commutation MOSFET; and
a driving semiconductor element to drive rectification and commutation MOSFETs, the rectification and commutation MOSFETs and the driving semiconductor element being formed over one package,
wherein the rectification MOSFET and the commutation MOSFET are laminated via a conductive member, and the conductive member is electrically connected to a circuit of the DC/DC converter.
2. The semiconductor device according to claim 1 ,
wherein the rectification MOSFET, the commutation MOSFET, and the driving semiconductor element are laminated.
3. The semiconductor device according to claim 1 ,
wherein a capacitor is located between lead frames located on positive and negative potential sides of a direct-current input power source that drives the rectification MOSFET and the commutation MOSFET.
4. The semiconductor device according to claim 1 ,
wherein a metal plate is laminated in contact with the commutation MOSFET, and a capacitor is placed between a lead frame located on a positive potential side of a direct-current input power source and the another metal plate.
5. A semiconductor device for a DC/DC converter, comprising:
a rectification MOSFET;
a commutation MOSFET; and
a driving semiconductor element to drive rectification and commutation MOSFETs, the rectification and commutation MOSFETs and the driving semiconductor element being formed over one package,
wherein the rectification MOSFET and the commutation MOSFET are laminated via a conductive member interposed between the rectification MOSFET and the commutation MOSFET to form a lamination stack comprising the rectification MOSFET and the commutation MOSFET being formed on opposite major surfaces of the conductive member, and the conductive member is electrically connected to a circuit of the DC/DC converter.
6. The semiconductor device according to claim 5 ,
wherein the rectification MOSFET, the commutation MOSFET, and the driving semiconductor element are laminated.
7. The semiconductor device according to claim 5 ,
wherein a capacitor is located between lead frames located on positive and negative potential sides of a direct-current input power source that drives the rectification MOSFET and the commutation MOSFET.
8. The semiconductor device according to claim 5 ,
wherein a metal plate is laminated in contact with the commutation MOSFET, and a capacitor is placed between a lead frame located on a positive potential side of a direct-current input power source and the another metal plate.