Wafer-level chip scale package and method for fabricating and using the same
View Patent ↗A packaged semiconductor device (a wafer-level chip scale package) containing a conductive adhesive material as an electrical interconnect route between the semiconductor die and a patterned conductive substrate is described. The patterned conductive substrate acts not only as a substrate, but also as a redistribution layer that converts the dense pad layout of the die to a larger array configuration of the solder balls in the circuit board. Using the invention allows the formation of a lower priced chip scale package that also overcomes the restriction of the die size used in die-sized chip packages and the input-output pattern that can be required by the printed circuit board. Thus, the invention can provide a familiar pitch (i.e., interface) to the printed circuit board for any small die.
1. A method for making wafer-level chip scale package, comprising:
providing a chip containing a stud bump;
providing at least one metallic foil;
attaching the chip to the at least one metallic foil using an adhesive material containing conductive particles;
encapsulating the chip except for the surface of the chip attached to the at least one metallic foil; and
then patterning the at least one metallic foil to form a plurality of conductive traces while the plurality of conductive traces are mechanically supported by the adhesive material.
2. The method of claim 1 , wherein the adhesive material comprises an anisotropic conductive film, an anisotropic conductive paste, or an isotropic conductive paste.
3. The method of claim 1 , wherein the plurality of conductive traces serves as a redistribution layer.
4. A method for making wafer-level chip scale package, comprising:
providing a chip with a stud bump;
providing a at least one metallic foil;
providing an adhesive material containing conductive particles on the chip, the at least one metallic foil, or both;
pressing the chip and the at least one metallic foil together;
curing the adhesive material;
encapsulating the chip except for the surface of the chip attached to the at least one metallic foil; and
then patterning the at least one metallic foil to form a plurality of conductive traces while the plurality of conductive traces are mechanically supported by the adhesive material.
5. The method of claim 4 further comprising providing the chip with a chip pad.
6. The method of claim 4 , in eluding providing at least one conductive particle between the stud bump arid the at least one metallic foil.
7. The method of claim 4 , wherein the adhesive material comprises an anisotropic conductive film, an anisotropic conductive paste, or an isotropic conductive paste.
8. The method of claim 4 , wherein the curing the adhesive material electrically and mechanically connects the chip to the at least one metallic foil.
9. The method of claim 4 , wherein the plurality of conductive traces serves as a redistribution layer.
10. The method of claim 4 , wherein the stud bump comprises Cu.
11. A method of fabricating a wafer-level chip scale package, the method comprising:
providing a substrate having at least one die having a surface where conductive bumps are formed;
disposing an adhesive layer on the substrate to contact the adhesive layer to the surface of the at least one die, the adhesive layer comprising conductive particles therein, the conductive particles comprising metal with a breakable insulating coating thereon;
bonding at least one metallic foil to the adhesive layer so as to connect the at least one metallic foil electrically to the conductive bumps through the conductive particles;
encapsulating the at least one metallic foil except the surface of the at least one die
then patterning the at least one metallic foil to form a plurality of conductive trace on the adhesive layer while the plurality of conductive traces are mechanically supported by the adhesive material; and
forming conductive bumps on the plurality of conductive traces.
12. The method of claim 11 , further comprising encapsulating the chip except for the surfaces of the chip attached to the at least one metallic foil.
13. The method of claim 11 , including providing at least one conductive particle between the stud bump and the at least one metallic foil.
14. The method of claim 11 , wherein the adhesive material comprises an anisotropic conductive film, an anisotropic conductive paste, or an isotropic conductive paste.
15. The method of claim 11 , wherein the stud bump comprises Cu.