Electro-optical device and electronic apparatus
View Patent ↗An electro-optical device comprising a first substrate, a second substrate facing the first substrate, a light-emitting layer arranged between the first substrate and the second substrate which is capable of emitting light from a plurality of pixels including at least a first subpixel and a second subpixel, the first subpixel forming a first image and the second subpixel forming a second image, and a light-shielding layer arranged between the second substrate and the light-emitting layer having an opening which is capable of transmitting light emitted from a first subpixel in the light-emitting layer through the second substrate to a first range and transmitting light emitted from the second subpixel of the light-emitting layer through the second substrate to a second range.
1. An electro-optical device comprising:
a first substrate;
a second substrate facing the first substrate;
a light-emitting layer arranged between the first substrate and the second substrate which is capable of emitting light from a plurality of pixels including at least a first subpixel and a second subpixel, the first subpixel forming a first image and the second subpixel forming a second image;
a light-shielding layer arranged between the second substrate and the light-emitting layer having an opening which is capable of transmitting light emitted from a first subpixel in the light-emitting layer through the second substrate to a first range and transmitting light emitted from the second subpixel of the light-emitting layer through the second substrate to a second range;
a first electrode arranged between the first substrate and the light-emitting layer, the first electrode facing the light-emitting layer;
a second electrode arranged between the light-emitting layer and the light-shielding layer, the second electrode facing the light-emitting layer;
a plurality of transistors corresponding to each of the pixels, each of the transistors being capable of controlling the flow of current between first electrode and the second electrode through the light-emitting layer;
a power line arranged between the first substrate and the first electrode extending in a first direction which is capable of supplying electric power to the plurality of transistors,
a plurality of control lines;
a plurality of signal lines;
a plurality of capacitor elements corresponding to each of the pixels arranged in the area between the first substrate and the power line above the power line, the capacitor elements being capable of holding a gate potential of each of the transistors; and
a plurality of switching elements corresponding to each of the pixels arranged between the first substrate and the light-emitting layer, the switching elements being capable of supplying and blocking of the flow of a current between the first and second electrode through the light-emitting layer, and each of the switching elements being controlled by a control signal supplied to one control line selected from the plurality of control lines.
2. The electro-optical device according to claim 1 , further comprising:
a resin layer arranged between the light-emitting layer and the light-shielding layer.
3. An electro-optical device comprising:
a first substrate;
a second substrate facing the first substrate;
a light-emitting layer arranged between the first substrate and the second substrate, light-emitting layer being capable of emitting light from a plurality of pixels;
a light-shielding layer arranged between the second substrate and the light-emitting layer;
a first electrode arranged between the first substrate and the light-emitting layer, the first electrode facing the light-emitting layer;
a second electrode arranged between the light-emitting layer and the light-shielding layer, the second electrode facing the light-emitting layer;
a plurality of transistors corresponding to each of the pixels, each of the transistors being capable of controlling the flow of current between first electrode and the second electrode through the light-emitting layer;
a power line arranged between the first substrate and the first electrode extending in a first direction which is capable of supplying electric power to the plurality of transistors,
a plurality of control lines;
a plurality of signal lines;
a plurality of capacitor elements corresponding to each of the pixels arranged in the area between the first substrate and the power line above the power line, the capacitor elements being capable of holding a gate potential of each of the transistors; and
a switching element arranged between one signal line selected from the plurality of signal lines and the corresponding capacitor element, each of the switching elements being controlled by a control signal supplied to one control line selected from the plurality of control lines
wherein the plurality of pixels includes at least a first subpixel and a second subpixel arranged in an alternating configuration in the first direction, the first subpixel forming a first image which is emitted from the first subpixel of the light-emitting layer to a first range, and the second subpixel forming a second image which is emitted from the second subpixel of the light-emitting layer to a second range.
4. The electro-optical device according to claim 3 , further comprising:
a resin layer arranged between the light-emitting layer and the light-shielding layer.
5. The electro-optical device according to claim 3 , wherein each of the transistors is disposed on one side of the power line and a corresponding switching element is disposed on the other side of the power line in a second direction intersecting the first direction, and each of the transistors faces the corresponding switching element.
6. The electro-optical device according to claim 5 , wherein the transistors and the switching elements are arranged between the first substrate and the power line, each of the transistors includes a first semiconductor layer having a channel region, a source region, and a drain region, and each of the switching elements includes a second semiconductor layer having a channel region, a source region, and a drain region, where the channel region, the source region, and the drain region in each of the first and second semiconductor layers are aligned in the first direction.
7. The electro-optical device according to claim 6 , wherein each of the transistors has an island electrode formed above the channel region of the corresponding first semiconductor layer, and the capacitor elements comprise at least one first semiconductor layer and island electrode.
8. The electro-optical device according to claim 7 , wherein each island electrode extends across the power line in the second direction, each first semiconductor layer extends across the power line in the second direction in plan, and each island electrode is electrically connected to the drain region of a corresponding second semiconductor layer disposed on the side of the power line.
9. The electro-optical device according to claim 6 , wherein the drain region of each first semiconductor layer is disposed to the side of the power line, and the drain region of each first semiconductor layer is electrically connected to the first electrode on the side of the power line.
10. The electro-optical device according to claim 9 , wherein the drain region of one of the first semiconductor layers is disposed on one side of the power line in a first pixel, while the drain region is disposed on the other side of the power line in an adjacent first pixel in the first direction.
11. The electro-optical device according to claim 10 , wherein at least the first subpixel and the second subpixel are adjacent in the first direction, each of the control lines extends in the first direction and corresponds to either the first subpixel and the second subpixel, and
each of the signal lines extends in the second direction and corresponds to either the first subpixel or the second subpixel.
12. The electro-optical device according to claim 11 , wherein the transistor in the first pixel is adjacent to the switching element in an adjacent second subpixel in the first direction, wherein the first subpixel is also adjacent to the second subpixel in the second direction, and the transistor in the first subpixel is adjacent to the switching element of the second subpixel in the second direction with at least one control line provided between the transistor in the first subpixel and the switching element in the second subpixel.
13. The electro-optical device according to claim 11 , wherein the transistor and the switching element in a first subpixel and the transistor and the switching element in an adjacent second subpixel in the first direction are located between the signal line corresponding to the first pixel and the signal line corresponding to the second subpixel.
14. The electro-optical device according to claim 13 , wherein the plurality of pixels are divided into a plurality of pixel groups comprising at least a first subpixel and an adjacent second subpixel in the first direction, wherein the plurality of pixel groups are aligned in the first direction, the plurality of signal lines are arranged between the first substrate and the power line and extend across the power line in the second direction, and the power line extends across adjacent pixel groups in the first direction.
15. The electro-optical device according to claim 14 , wherein a connecting portion electrically connecting each of the first semiconductor layers to the power line is arranged in a region located between each of the signal lines and a corresponding island electrode.
16. The electro-optical device according to claim 11 , further comprising:
a second connecting portion electrically connecting the drain region of each of the first semiconductor layers to the first electrode; and
a second light-shielding layer capable of partitioning at least a first subpixel and an adjacent second subpixel in the first direction,
wherein the second light-shielding layer is arranged between the first electrode and the light-shielding layer on top of the second connecting portion corresponding to the first and second subpixel.
17. The electro-optical device according to claim 16 , further comprising:
an auxiliary lead arranged between the second electrode and the light-shielding layer, the auxiliary lead being electrically connected to the second electrode,
wherein the auxiliary lead is formed on top of the second light-shielding layer.
18. An electronic apparatus comprising:
a display portion comprising the electro-optical device of claim 1 .