IP Library Granted Patent US 8,168,457
Granted Patent B2
US 8,168,457 · App. 12/350,615 · Granted May 1, 2012

Shaped articles comprising semiconductor nanocrystals and methods of making and using same

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Quick Facts
Patent No.
US 8,168,457
App. No.
12/350,615
Granted
May 1, 2012
Kind
B2
Abstract

A shaped article comprising a plurality of semiconductor nanocrystals. Devices incorporating shaped articles are also provided. Methods of manufacturing shaped articles by various molding processes are also provided.

Claims (23)

1. A method of manufacturing a shaped article comprising a plurality of semiconductor nanocrystals, comprising:

(1) preparing a pre-form material by adding a plurality of semiconductor nanocrystals to a first material; and

(2) molding the pre-form material into the shape article, wherein the molding includes molding the pre-form material using at least one method selected from a group consisting of: injection molding, extrusion molding, blow molding, compression molding, contact molding, impression molding, press molding, and resin transfer molding.

2. The method of claim 1 , wherein the plurality of semiconductor nanocrystals comprises a PbS core.

3. The method of claim 1 , wherein the shaped article is a lens.

4. The method of claim 1 , wherein the shaped article is in a light emitting diode cup.

5. A method of manufacturing a light emitting diode comprising the method of claim 3 and further comprising incorporating the shaped article into a light emitting diode.

6. A method of manufacturing a light emitting diode comprising the method of claim 4 and further comprising incorporating the shaped article into a light emitting diode.

7. The method of claim 1 , wherein the shaped article comprises optical epoxy.

8. The method of claim 1 , wherein upon excitation the shaped article emits light in the infra-red range.

9. The method of claim 1 , wherein the shaped article is a layer of a solar cell.

10. A method of manufacturing a solar cell comprising the method of claim 9 and further comprising incorporating the shaped article into a solar cell.

11. The method of claim 1 , wherein the first material is a matrix material.

12. The method of claim 1 , wherein the first material is a polymer.

13. The method of claim 1 , wherein the plurality of semiconductor nanocrystals is a plurality of two or more different semiconductor nanocrystals.

14. The method of claim 11 , wherein step (1) comprises: dissolving the first matrix material in a solvent to form a first matrix material solution; dissolving the plurality of semiconductor nanocrystals in the same solvent to form a semiconductor nanocrystal solution; mixing the first matrix material solution and the semiconductor nanocrystal solution to form a semiconductor nanocrystal-first matrix material solution; evaporating the solvent from the semiconductor nanocrystal-first matrix material solution to form the pre-form material.

15. The method of claim 11 , wherein step (1) comprises: dissolving the first matrix material in a solvent to form a first matrix material solution; dissolving the plurality of semiconductor nanocrystals in the same solvent to form a semiconductor nanocrystal solution; mixing the first matrix material solution and the semiconductor nanocrystal solution to form a semiconductor nanocrystal-first matrix material solution; evaporating the solvent from the semiconductor nanocrystal-first matrix material solution to form a solid semiconductor nanocrystal composition; and micronizing the solid semiconductor nanocrystal composition to make the pre-form material.

16. The method of claim 11 , wherein step (1) comprises: dissolving the first matrix material in a solvent to form a first matrix material solution; dissolving a plurality of semiconductor nanocrystals in the same solvent to form a semiconductor nanocrystal solution; mixing the first matrix material solution and the semiconductor nanocrystal solution to form a semiconductor nanocrystal-first matrix material solution; evaporating the solvent from the semiconductor nanocrystal-first matrix material solution to form a solid semiconductor nanocrystal-first matrix material composite; and micronizing the solid semiconductor nanocrystal-first matrix material composite to form a micronized semiconductor nanocrystal-first matrix material composite; and dispersing the micronized semiconductor nanocrystal-first matrix material composite in a second matrix material to make the pre-form material.

17. The method of claim 16 , wherein the first matrix material is a silica sol-gel.

18. The method of claim 16 , wherein the second matrix material is an optical epoxy.

19. The method of claim 11 , wherein step (1) comprises: dissolving the first matrix material in a solvent to form a first matrix material solution; dissolving a plurality of first semiconductor nanocrystals and a plurality of second, different semiconductor nanocrystals in the same solvent to form a semiconductor nanocrystal solution; mixing the first matrix material solution and the semiconductor nanocrystal solution to form a semiconductor nanocrystal-first matrix material solution; evaporating the solvent from the semiconductor nanocrystal-first matrix material solution to form a solid semiconductor nanocrystal composition; and micronizing the solid semiconductor nanocrystal composition to make the pre-form material.

20. The method of claim 11 , wherein step (1) comprises: adding a plurality of first semiconductor nanocrystals to the first matrix material to form a first mixture; micronizing the first mixture; adding a plurality of second, different semiconductor nanocrystals to a second matrix material to form a second mixture; micronizing the second mixture; and adding the micronized first mixture and the micronized second mixture to a base matrix material to make the pre-form material.

21. The method of claim 1 , wherein forming the pre-form material comprises injection molding the pre-form material.

Assignments (4)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 17, 2011
From: EVIDENT TECHNOLOGIES, INC.
To: NANOCO TECHNOLGIES, LTD.
Reel/Frame 027244/0766 →
RELEASE OF SECURITY INTEREST Recorded Dec 17, 2010
From: LC CAPITAL MASTER FUND, LTD; OPALKA FAMILY INVESTMENT PARTNERS, LP; ROBB, WALTER L.; SINGER CHILDREN'S MANAGEMENT TRUST; CHALIS CAPITAL LLC; BAZCO, LLC; BIRCH HOLDINGS, LLC; SOLA LTD
To: EVIDENT TECHNOLOGIES, INC.
Reel/Frame 025521/0260 →
SECURITY AGREEMENT Recorded May 26, 2010
From: EVIDENT TECHNOLOGIES
To: LC CAPITAL MASTER FUND, LTD; OPALKA FAMILY INVESTMENT PARTNERS, LP; WALTER L. ROBB C/O VANTAGE MANAGEMENT, INC.; SINGER CHILDREN'S MANAGEMENT TRUST C/O ROMULUS HOLDINGS INC.; CHALIS CAPITAL LLC; BAZCO, LLC; BIRCH HOLDINGS, LLC; SOLA LTD C/O SOLUS ALTERNATIVE ASSET MANAGEMENT LP
Reel/Frame 024434/0534 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 30, 2010
From: GILLIES, JENNIFER
To: EVIDENT TECHNOLOGIES
Reel/Frame 024157/0331 →