Impurity-activating thermal process method and thermal process apparatus

1. An impurity-activating thermal process method, wherein a thermal cycle is successively repeated in a plurality of iterations in an impurity-activating thermal process after a target is subjected to an impurity introduction step,

wherein each thermal cycle includes: increasing a temperature from an initial temperature to a first predetermined temperature T 1 (° C.) at an arbitrary first temperature-increasing rate R 1 (° C./sec); holding the temperature at the first predetermined temperature T 1 (° C.) for an arbitrary first holding period t 1 (sec); increasing the temperature from the first predetermined temperature T 1 (° C.) to a second predetermined temperature T 2 (° C.) at a second temperature-increasing rate R 2 (° C./sec) of 1.0×10 7 (° C./sec) or less; holding the temperature at the second predetermined temperature T 2 (° C.) for a second holding period t 2 (sec) of 50 msec or less; decreasing the temperature from the second predetermined temperature T 2 (° C.) to the first predetermined temperature T 1 (° C.) at a first temperature-decreasing rate R 1 ′ (° C./sec) of 1.0×10 7 (° C./sec) or less; holding the temperature at the first predetermined temperature T 1 (° C.) for an arbitrary third holding period t 3 (sec); and decreasing the temperature from the first predetermined temperature T 1 (° C.) to a final temperature at an arbitrary second temperature-decreasing rate R 2 ′ (° C./sec),

a beam scan-type laser is used as a heat source in the activation thermal process,

the target includes SiGe, and

an overlap of the beam of the laser is increased to thereby increase the number of times a same location of the target is irradiated with the laser beam.

2. The impurity-activating thermal process method of claim 1 , comprising, before performing the activation thermal process:

forming an isolation region on a substrate including SiGe being the target; subjecting the substrate to an impurity introduction for threshold control; forming a gate electrode on the substrate with a gate insulating film interposed therebetween; forming an offset spacer on a sidewall of the gate electrode; implanting ions of an impurity into the substrate using the gate electrode and the offset spacer as a mask to thereby form an extension region; performing a first activation thermal process for activating the impurity in the extension region; forming a sidewall spacer on the sidewall of the gate electrode with the offset spacer interposed therebetween; and implanting ions of an impurity into the substrate using the gate electrode, the offset spacer and the sidewall spacer as a mask to thereby form a source/drain region.

3. The impurity-activating thermal process method of claim 1 , wherein:

the first predetermined temperature T 1 (° C.) is 400° C. to 800° C., both inclusive; and

the second predetermined temperature T 2 (° C.) is 1100° C. to 1400° C., both inclusive.

4. The impurity-activating thermal process method of claim 1 , wherein:

in a first iteration of the thermal cycle, the temperature-decreasing process ends at the first predetermined temperature T 1 (° C.);

in a second or subsequent iteration, excluding a final iteration, of the thermal cycle, the temperature-increasing process starts at the first predetermined temperature T 1 (° C.) and the temperature-decreasing process ends at the first predetermined temperature T 1 (° C.); and

in the final iteration of the thermal cycle, the temperature-increasing process starts at the first predetermined temperature T 1 (° C.) and the temperature-decreasing process ends at the final temperature.

5. The impurity-activating thermal process method of claim 1 , wherein the number of iterations of the thermal cycle is 2 to 5.

6. The impurity-activating thermal process method of claim 1 , wherein at least either before or after the activation thermal process, another thermal process is performed by holding the temperature at a third predetermined temperature T 3 (° C.) lower than the second predetermined temperature T 2 (° C.) for a third holding period t 3 (sec) longer than the second holding period t 2 (sec).

7. The impurity-activating thermal process method of claim 6 , wherein:

the other thermal process is performed both before and after the activation thermal process; and

the third predetermined temperature T 3 (° C.) and the third holding period t 3 (sec) in the other thermal process performed before the activation thermal process are different from those in the other thermal process performed after the activation thermal process.

8. The impurity-activating thermal process method of claim 6 , wherein:

a temperature-increasing rate up to the third predetermined temperature T 3 (° C.) in the other thermal process and a temperature-decreasing rate from the third predetermined temperature T 3 (° C.) in the other thermal process are 500° C./sec or less; and

the third holding period t 3 (sec) is 50 msec to 1 sec, both inclusive.

9. The impurity-activating thermal process method of claim 6 , wherein:

the second predetermined temperature T 2 (° C.) is 1100° C. to 1400° C., both inclusive; and

the third predetermined temperature T 3 (° C.) is 650° C. to 1150° C., both inclusive.

10. The impurity-activating thermal process method of claim 1 , wherein:

performing the thermal cycle in a plurality of iterations by scanning the target with a beam of the laser.

11. The impurity-activating thermal process method of claim 1 , wherein at least one of the initial temperature and the final temperature is room temperature or a vicinity thereof.