IP Library Granted Patent US 7,927,166
Granted Patent B2
US 7,927,166 · App. 12/357,350 · Granted Apr 19, 2011

Organic light emitting display and method of manufacturing the same

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Quick Facts
Patent No.
US 7,927,166
App. No.
12/357,350
Granted
Apr 19, 2011
Kind
B2
Abstract

In a method of manufacturing an organic light emitting display according to an embodiment, when a thin film transistor substrate including a display area and a non-display area is prepared, an organic light emitting layer is formed on the display area. Then, a first cathode layer is formed on the organic light emitting layer through a first deposition method, and a second cathode layer is formed on the first cathode layer through a second deposition method. The first and/or second deposition method may be performed by using heat. Thus, the light-emitting quality of the organic light emitting display may be improved.

Claims (20)

1. A method of manufacturing an organic light emitting display, the method comprising:

preparing a thin film transistor substrate including a display area and a non-display area;

forming an organic light emitting layer on the display area;

forming a first cathode layer on the organic light emitting layer through a first deposition method; and

forming a second cathode layer directly on the first cathode layer through a second deposition method,

wherein at least one of the first deposition method or the second deposition method is performed by a heat vaporizing method.

2. The method of claim 1 , wherein the first deposition method is the heat vaporizing method and the second deposition method is a sputtering method.

3. The method of claim 1 , wherein the second cathode layer covers a portion of the non-display area.

4. The method of claim 3 , wherein the first cathode layer covers an upper surface and a side surface of the organic light emitting layer.

5. The method of claim 2 , wherein the forming of the first cathode layer comprises:

fixing a mask that is used in forming the organic light emitting layer and is spaced apart from the thin film transistor substrate; and

depositing a conductive material on the organic light emitting layer.

6. The method of claim 5 , wherein the second cathode layer comprises a same material as the first cathode layer.

7. The method of claim 5 , wherein the second cathode layer comprises a different material from the first cathode layer.

8. The method of claim 5 , wherein the conductive material comprises aluminum (Al), silver (Ag), gold (Au), copper (Cu), or an alloy thereof.

9. The method of claim 4 , wherein end portions of the first cathode layer have a width of about 0.5 mm to about 5 mm from end portions of the organic light emitting layer, respectively.

10. The method of claim 9 , wherein end portions of the second cathode layer have a width of about 1 mm to about 10 mm from the end portions of the first cathode layer, respectively.

11. The method of claim 1 , wherein the first cathode layer is thinner than the second cathode layer.

12. The method of claim 11 , wherein the first cathode layer has a thickness of about 100 angstroms to about 1000 angstroms, and the second cathode layer has a thickness of about 1001 angstroms to about 5000 angstroms.

13. The method of claim 1 , wherein the first deposition method is the heat vaporizing method and the second deposition method is a method other than the heat vaporizing method.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 22, 2012
From: SAMSUNG ELECTRONICS CO., LTD.
To: SAMSUNG DISPLAY CO., LTD.
Reel/Frame 029008/0364 →