Method of providing electrical separation in integrated devices and related devices
View Patent ↗An integrated device includes two sections (A, B), such as a DFB laser (A) and an EAM modulator (B), having a semi-insulating (SI) separation region therebetween. The separation region ( 24 ) is of a material acting as a trap on electrons and configured to impede current flow between the two sections (A, B) due to holes. The separation region ( 24 ) may be of a material acting as a trap both on electrons and holes. Alternatively, the separation region ( 24 ) is of a material that acts as a trap on electrons and is provided over a p-type substrate ( 20 ) common to the two sections (A, B).
1. A method of providing a semi-insulating (SI) separation region between two sections A and B of an integrated device, the method comprising making said separation region of a material acting as a trap for electrons and to impede current flow between sections A and B due to holes, the material of the separation region comprising AlGaInAs.
2. The method of claim 1 , further comprising configuring the material to act as a trap for electrons and holes.
3. The method of claim 1 , further comprising:
configuring the material to act as a trap for electrons;
providing a p-type substrate common to sections A and B, and
forming the separation region over the p-type substrate common to sections A and B.
4. The method of claim 3 , further comprising providing the separation region with a reversed structure starting from the p-type substrate and having an upper n-type cladding disposed over the A and B sections.
5. The method of claim 1 , further comprising configuring the material to have deep acceptor levels acting as an electron trap.
6. The method of claim 1 , further comprising including an iron-doped material in the separation region.
7. The method of claim 1 , further comprising including InGaAsP in the separation region.
8. The method of claim 1 , further comprising configuring the material to have deep level traps acting on both electrons and holes.
9. The method of claim 1 , further comprising:
etching a transition region between sections A and B, and
depositing the material in the transition region to form the semi-insulating separation region.
10. The method of claim 1 , further comprising butt-coupling sections the semi-insulating separation region sections A and B.
11. The method of claim 1 , further comprising providing one of sections A and B as a laser source.
12. The method of claim 11 , further comprising configuring the laser source as a distributed feedback laser source.
13. The method of claim 12 , further comprising forming a DFB grating over one of sections A and B.
14. The method of claim 1 , further comprising configuring one of sections A and B as a modulator.
15. The method of claim 14 , further comprising configuring one of sections A and B as an EAM modulator.