Solid-state imaging device and camera
View Patent ↗Disclosed is a solid-state imaging device which includes a group of elements, the group including at least color photoelectric conversion elements configured to convert light signals in first, second, and third wavelength ranges to electric signals, respectively, a white photoelectric conversion element configured to convert light signals in the wavelength range including the entire visible light range and a portion of the infrared light range to electric signals, and a light-shielded diode element configured to be shielded from light. A unit is formed by including the white photoelectric conversion element and the light-shielded diode element for one color photoelectric conversion element, and within the unit, the white photoelectric conversion element is electrically connected with the light-shielded diode element by way of an overflow path. A camera provided with the solid-state imaging device is also disclosed.
1. A solid-state imaging device, comprising:
an imaging section including a group of elements, the group of elements including color photoelectric conversion elements configured to convert light signals in first, second, and third wavelength ranges to electric signals, respectively, a white photoelectric conversion element configured to convert light signals in a wavelength range including an entire visible light range and a portion of an infrared light range to electric signals, and a light-shielded diode element configured to be shielded from light; and
a peripheral circuit disposed around the imaging section, wherein
in the imaging section, a unit is formed by including a white photoelectric conversion element and a light-shielded diode element for one color photoelectric conversion element, and within the unit, the white photoelectric conversion element is electrically connected with the light-shielded diode element by way of an overflow path.
2. The solid-state imaging device according to claim 1 , wherein
the unit is formed by including two elements each vertically and horizontally, four elements in total, a first one being the white photoelectric conversion element, a second one being the one color photoelectric conversion element, and a third one being the light-shielded diode element, and a fourth one being another light-shielded diode element, and within the unit, the white photoelectric conversion element is disposed diagonally to the one color photoelectric conversion element, and the two light-shielded diode elements are each electrically connected with the white photoelectric conversion element by way of overflow paths.
3. The solid-state imaging device according to claim 2 , wherein
a group of the color photoelectric conversion elements are disposed to form a Bayer arrangement.
4. The solid-state imaging device according to claim 3 , wherein
the imaging section further includes on-chip lenses each spatially corresponding to the one color photoelectric conversion element and the white photoelectric conversion element and disposed to form a slant pixel arrangement.
5. The solid-state imaging device according to claim 4 , wherein
the imaging section further includes an inner lens to serve as a light condensing structure.
6. The solid-state imaging device according to claim 4 , wherein
the imaging section further includes an optical waveguide to serve as a light condensing structure.
7. The solid-state imaging device according to claim 4 , wherein
an area of the light-shielded diode element is smaller than an area of at least one of the photoelectric conversion elements and the white photoelectric conversion element.
8. The solid-state imaging device according to claim 4 , wherein
in the imaging section, a floating diffusion region, an amplifying transistor, and a reset transistor are disposed so as to be shared by a plurality of the elements.
9. The solid-state imaging device according to claim 1 , wherein
the unit includes one white photoelectric conversion element and two light-shielded diode elements.
10. The solid-state imaging device according to claim 1 , wherein
a group of the color photoelectric conversion elements are disposed to form a Bayer arrangement.
11. The solid-state imaging device according to claim 1 , wherein
the imaging section further includes on-chip lenses each spatially corresponding to the one color photoelectric conversion element and the white photoelectric conversion element and disposed to form a slant pixel arrangement.
12. The solid-state imaging device according to claim 1 , wherein
the imaging section further includes an inner lens to serve as a light condensing structure.
13. The solid-state imaging device according to claim 1 , wherein
the imaging section further includes an optical waveguide to serve as a light condensing structure.
14. The solid-state imaging device according to claim 1 , wherein
an area of the light-shielded diode element is smaller than an area of at least one of the color photoelectric conversion elements and the white photoelectric conversion element.
15. The solid-state imaging device according to claim 1 , wherein
the first wavelength range is a wavelength range of a blue color filter, the second wavelength range is a wavelength range of a green color filter, and the third wavelength range is a wavelength range of a red color filter.
16. The solid-state imaging device according to claim 1 , wherein
the first wavelength range is a wavelength range of a cyan color filter, the second wavelength range is a wavelength range of a magenta color filter, and the third wavelength range is a wavelength range of a yellow color filter.
17. A camera, comprising:
a solid-state imaging device;
an optical system configured to lead incident light to a photoelectric conversion element included in the solid-state imaging device; and
a signal processing circuit configured to process output signals from the solid-state imaging device;
wherein the solid-state imaging device includes a group of elements, the group of photoelectric conversion elements including color photoelectric conversion elements configured to convert light signals in first, second, and third wavelength ranges to electric signals, respectively, a white photoelectric conversion element configured to convert light signals in a wavelength range including an entire visible light range and a portion of an infrared light range to electric signals, and a light-shielded diode element configured to be shielded from light, and
wherein a unit is formed by including a white photoelectric conversion element and a light-shielded diode element for one color photoelectric conversion element, and within the unit, the white photoelectric conversion element is electrically connected with the light-shielded diode element by way of an overflow path.
18. The camera according to claim 17 , wherein
the unit is formed by including two elements each vertically and horizontally, four elements in total, a first one being the white photoelectric conversion element, a second one being the one color photoelectric conversion element, and a third one being the light-shielded diode element, and a fourth one being another light-shielded diode element, and within the unit, the white photoelectric conversion element is disposed diagonally to the one color photoelectric conversion element, and the two light-shielded diode elements are each electrically connected with the white photoelectric conversion element by way of overflow paths.
19. The camera according to claim 18 , wherein
a group of the color photoelectric conversion elements are disposed to form a Bayer arrangement.
20. The camera according to claim 19 , wherein
the solid-state imaging device further includes on-chip lenses each spatially corresponding to the one color photoelectric conversion element and the white photoelectric conversion element and disposed to form a slant pixel arrangement.