Single ended laser driving system and method

1. A single ended laser driving circuit system, comprising:

a thin oxide gate switched by a data signal, the thin oxide gate configured to output a switching signal;

a thick oxide current source configured to generate a bias current and a modulation current at a laser operating voltage, the modulation current based upon the switching signal, the thick oxide current source further configured to provide the bias current to the laser;

wherein the laser is configured to operate at the laser operating voltage based upon the modulation current and the bias current;

wherein the thin oxide gate is coupled to a ground and is configured to activate the laser by causing current supplied by the thick oxide current source to flow through the laser and to the ground when the data signal indicates that the laser should be activated;

wherein the thin oxide gate further comprises a first at least one n-channel field effect transistor and the thick oxide current source further comprises a second at least one n-channel field effect transistor having an oxide thickness greater than the first at least one n-channel field effect transistor; and

wherein the thick oxide current source further comprises a current mirror circuit configured to step up a switching voltage of the switching signal, wherein the laser operating voltage is greater than the switching voltage, the current mirror circuit further configured to provide a modulation current and a bias current to the laser.

2. The single ended laser driving circuit system of claim 1 , further comprising a CMOS level converter configured to generate the switching signal from the data signal, wherein the data signal is a differential data signal.

3. The single ended laser driving circuit system of claim 1 , wherein the laser is further configured to emit an optical signal based upon the switching signal.

4. The single ended laser driving circuit system of claim 1 , wherein the laser operating voltage is approximately 3.3V.

5. The single ended laser driving circuit system of claim 1 , wherein the thin oxide gate is configured to output the switching signal as a CMOS level signal having a first voltage and a first amperage.

6. The single ended laser driving circuit system of claim 5 , wherein the first voltage is approximately 1.2 volts and the laser operating voltage is approximately 3.3 volts.

7. The single ended laser driving circuit system of claim 5 , wherein the data signal is a differential signal and thin oxide gate is configured to convert the data signal to the switching signal, wherein the switching signal is a CMOS level signal.

8. The single ended laser driving circuit system of claim 5 , wherein the thick oxide current source modulates the modulation current, the modulation current combined with a bias current to drive the laser.

9. A method for driving a laser diode in a single ended laser driving circuit, comprising the steps of:

generating a switching signal from a data signal, the switching signal generated at a switching voltage, the switching signal generated by a thin oxide gate;

generating a bias current and a modulation current at a laser operating voltage, the modulation current based upon the switching signal, wherein a thick oxide current source is configured to provide the bias current to the laser;

operating the laser at the laser operating voltage based upon the modulation current and the bias current, wherein the laser operating voltage is higher than the switching voltage;

wherein the thin oxide gate is coupled to a ground and is configured to activate the laser by causing current supplied by the thick oxide current source to flow through the laser and to the ground when the data signal indicates that the laser should be activated;

wherein the thin oxide gate further comprises a first at least one n-channel field effect transistor and the thick oxide current source further comprises a second at least one n-channel field effect transistor having an oxide thickness greater than the first at least one n-channel field effect transistor; and

wherein the thick oxide current source further comprises a current mirror circuit configured to step up a switching voltage of the switching signal, wherein the laser operating voltage is greater than the switching voltage, the current mirror circuit further configured to provide a modulation current and a bias current to the laser.

10. The method of claim 9 , further comprising the step of converting the data signal to a CMOS level signal, wherein the data signal is a differential data signal.

11. The method of claim 9 , further comprising the step of emitting an optical signal based upon the switching signal.

12. The method of claim 9 , wherein the laser operating voltage is approximately 3.3V.

13. The method of claim 9 , further comprising the step of outputting the switching signal as a CMOS level signal having a first voltage and a first amperage.

14. The method of claim 13 , wherein the first voltage is approximately 1.2 volts and the laser operating voltage is approximately 3.3 volts.

15. The method of claim 13 , wherein the data signal is a differential signal and the step of generating the switching signal further comprises the step of converting the differential signal to the switching signal, the switching signal a CMOS level signal.

16. The method of claim 13 , further comprising the step of modulating the modulation current, the modulation current combined with a bias current to drive the laser.

17. The method of claim 9 , further comprising the steps of

stepping up the switching voltage of the switching signal, wherein the laser operating voltage is greater than the switching voltage; and

providing a modulation current and a bias current to the laser.