Reflective electrode for a semiconductor light emitting apparatus

1. A semiconductor structure for use in a semiconductor light emitting apparatus, the structure comprising:

a first cladding layer;

an active layer in electrical contact with said first cladding layer, said active layer being operable to generate light;

a second cladding layer in electrical contact with said active layer, said second cladding layer having an outer face;

a reflective electrode on said outer face of said second cladding layer, said reflective electrode comprising:

an intermediate layer of electrically conductive material, wherein said intermediate layer comprises a diffused portion of said electrically conductive material in said second cladding layer and an un-diffused portion of said electrically conductive material on said second cladding layer;

a reflective layer on said intermediate layer, said reflective layer being electrically conductive and in electrical contact with said intermediate layer, said reflective layer being operable to reflect light generated in said active layer back through said second cladding layer, said active layer, and said first cladding layer.

2. The structure of claim 1 further comprising a substrate in contact with said first cladding layer, said substrate being operably configured to permit said light to exit the structure through said substrate.

3. The structure of claim 1 wherein said intermediate layer comprises a diffused portion of said electrically conductive material in said second cladding layer and an un-diffused portion of said electrically conductive material on said second cladding layer, said un-diffused portion being sufficiently thin to permit light generated in said active layer to be transmitted through said un-diffused portion without significant attenuation.

4. The structure of claim 1 wherein said intermediate layer comprises a diffused layer of electrically conductive material extending into the second cladding layer to a diffusion depth of about 50 nm.

5. The structure of claim 1 wherein said second cladding layer comprises p-type semiconductor material and wherein said intermediate layer comprises a material having a work function as close as possible to the sum of an electron affinity energy and a bandgap energy of said p-type semiconductor material.

6. The structure of claim 5 wherein said material comprises a metal selected from the group consisting of rhodium, palladium, nickel, platinum, gold, iridium, and rhenium.

7. The structure of claim 5 wherein said material comprises a conductive oxide.

8. The structure of claim 1 wherein said second cladding layer comprises n-type semiconductor material and wherein said intermediate layer comprises a metal having a work function close to or smaller than an electron affinity energy of said n-type semiconductor material.

9. The structure of claim 8 wherein said metal comprises a metal selected from the group consisting of aluminum, titanium, chromium, vanadium, and tantalum.

10. The structure of claim 1 wherein said first and second cladding layers and said active layer comprise group III-nitride semiconductor materials.

11. The structure of claim 1 wherein said active layer is operably configured to emit light at a first wavelength, and wherein said reflective layer comprises a material having an increased reflectivity at said first wavelength.

12. The structure of claim 11 wherein said reflective layer comprises at least one metal selected from the group consisting of aluminum, rhodium, palladium, silver, gold, magnesium, and nickel.

13. A semiconductor light emitting apparatus comprising the semiconductor light emitting structure of claim 1 and further comprising an electrode in electrical contact with said first cladding layer and whereby light is generated in said active layer when a voltage is applied between said electrode and said reflective electrode such that a forward bias current flows through said active layer.