Chemical solution deposition method of fabricating highly aligned MgO templates
View Patent ↗A superconducting article includes a substrate having an untextured metal surface; an untextured barrier layer of La 2 Zr 2 O 7 or Gd 2 Zr 2 O 7 supported by and in contact with the surface of the substrate; a biaxially textured buffer layer supported by the untextured barrier layer; and a biaxially textured superconducting layer supported by the biaxially textured buffer layer. Moreover, a method of forming a buffer layer on a metal substrate includes the steps of: providing a substrate having an untextured metal surface; coating the surface of the substrate with a barrier layer precursor; converting the precursor to an untextured barrier layer; and depositing a biaxially textured buffer layer above and supported by the untextured barrier layer.
1. A method of forming a buffer layer on a metal substrate comprising the steps of:
a. providing a substrate having an untextured metal surface;
b. coating said untextured surface of said substrate with a barrier layer precursor;
c. converting said precursor to an untextured barrier layer comprising an untextured material selected from the group consisting of La 2 Zr 2 O 7 , and Gd 2 Zr 2 O 7 , LaMnO 3 , RE 3 NbO 7 , and La 0.7 Sr 0.3 MnO 3 ; and
d. depositing a biaxially textured buffer layer above and supported by said untextured barrier layer.
2. A method in accordance with claim 1 wherein said substrate further comprises at least one material selected from the group consisting of Ni, Ni alloys, Cu, and Cu alloys.
3. A method in accordance with claim 2 wherein said substrate further comprises stainless steel.
4. A method in accordance with claim 1 wherein said coating step further comprises at least one technique selected from the group consisting of spin coating, slot-die coating, and dip coating.
5. A method in accordance with claim 1 wherein said converting step further comprises heating said coated substrate to a temperature in the range of 300° C. to 800° C. for a period of time not exceeding 75 minutes.
6. A method in accordance with claim 5 wherein said converting step further comprises heating said coated substrate to a temperature in the range of 400° C. to 750° C. for a period of time not exceeding 60 minutes.
7. A method in accordance with claim 6 wherein said converting step further comprises heating said coated substrate to a temperature in the range of 500° C. to 700° C. for a period of time not exceeding 45 minutes.
8. A method in accordance with claim 1 wherein said untextured barrier layer is a first untextured barrier layer and wherein said method further comprises, after said converting step and before said depositing step, the additional steps of:
a. coating said first untextured barrier layer with a second barrier layer precursor comprising an untextured material selected from the group consisting of La 2 Zr 2 O 7 , and Gd 2 Zr 2 O 7 , LaMnO 3 , RE 3 NbO 7 , and La 0.7 Sr 0.3 MnO 3 ; and
b. converting said second precursor to a second untextured barrier layer.
9. A method in accordance with claim 1 said barrier layer precursor is a first barrier layer precursor and wherein said method further comprises, after said coating step and before said converting step, the additional step of coating said first barrier layer precursor with a second barrier layer precursor.
10. A method in accordance with claim 1 wherein depositing step further comprises a method selected from the group consisting of ion beam assisted deposition and inclined substrate deposition.
11. A method in accordance with claim 10 wherein said biaxially textured buffer layer further comprises at least one biaxially textured material selected from the group consisting of MgO and TiN.
12. A method in accordance with claim 10 wherein said depositing step further comprises the additional step of homo-epitaxial deposition of additional biaxially textured buffer layer material.
13. A method in accordance with claim 1 wherein said depositing step further comprises the additional step of depositing a biaxially textured capping layer onto said biaxially textured buffer layer.
14. A method in accordance with claim 13 wherein said biaxially textured capping layer further comprises at least one biaxially textured material selected from the group consisting of SrTiO 3 , LaMnO 3 , SrRuO 3 , and RE 3 NbO 7 .
15. A method in accordance with claim 13 further comprising the additional step of: depositing a biaxially textured superconducting layer on said biaxially textured capping layer.
16. A method in accordance with claim 15 wherein said biaxially textured superconducting layer further comprises at least one biaxially textured material selected from the group consisting of YBCO and REBCO.