Resist composition and method for forming a pattern using the same

1. A resist composition comprising:

a hardener having a thermal-decomposable core part and a first photosensitive bond part, wherein the core part is formed with at least one material selected from the group consisting of Formulas 1 to 3:

where R is R1, R2, R3, R4, or H, and

and

a solvent having a low-molecular resin and a second photosensitive bond part.

2. The resist composition of claim 1 , wherein the low-molecular resin has a molecular weight of about 50 to about 300.

3. The resist composition of claim 1 , wherein the low-molecular resin is formed with at least one material selected from the group consisting of norbornyl acrylate, norbornyl methacrylate, normalhexyl acrylate, normalhexyl methacrylate, isobonyl acrylate, isobonyl methacrylate, ethyleneglycol diacrylate, ethyleneglycol dimethacrylate, and diepoxyethyleneglycol.

4. A resist composition of claim 1 , wherein the first and second bond parts each comprise a functional group that is capable of photo-reactively generating a radical or acid or cross-linking by way of a separate photo-initiator.

5. The resist composition of claim 4 , wherein the first and second bond parts are formed with at least one material selected from the group consisting of compounds respectively including an acryl group, a methacryl group, a cinnamoyl group, and an epoxy group.

6. The resist composition of claim 1 , wherein when exposed to light, the first and second bond parts react to the light and are cross-linked with each other.

7. The resist composition of claim 6 , wherein when exposed to light and heat-treated, the core part is denatured into a low-molecular structure.

8. A method for forming a pattern, the method comprising the steps of:

coating a patterning target film on a substrate with at least one material selected from the group consisting of silicon, silicon oxide, silicon nitride, metal, and metallic oxide;

depositing a resist layer on the coated pattering target film with a resist composition, the resist composition comprising a hardener having a thermal-decomposable core part and a first photosensitive bond part, and a solvent having a low-molecular resin and a second photosensitive bond part, wherein the core part is formed with at least one material selected from the group consisting of Formulas 1 to 3:

where R is R1, R2, R3, R4, or H, and

mounting a mold over the deposited resist layer, the mold having a convex portion, a recess portion, and a main body portion;

imprinting the resist layer with the mold to thereby form a pre-resist pattern with a pattern portion and a non-pattern portion;

exposing the pre-resist pattern to light to thereby form a cured resist pattern;

detaching the mold from the cured resist pattern;

removing the non-pattern portion from the cured resist pattern through ashing to thereby form a resist pattern; and

etching the patterning target film through the resist pattern to thereby form a predetermined pattern.

9. The method of claim 8 , wherein after the etching of the patterning target film through the resist pattern to thereby form the predetermined pattern, the method further comprising the steps of:

heat-treating the resist pattern; and

stripping the heat-treated resist pattern.

10. The method of claim 8 , wherein the low-molecular resin has a molecular weight of about 100 to about 300.

11. The method of claim 10 , wherein the low-molecular resin is formed with at least one material selected from the group consisting of norbornyl acrylate, norbornyl methacrylate, normalhexyl acrylate, normalhexyl methacrylate, isobonyl acrylate, isobonyl methacrylate, ethyleneglycol diacrylate, ethyleneglycol dimethacrylate, and diepoxyethyleneglycol.

12. The method of claim 8 , wherein the first and second bond parts each comprise a functional group that is capable of photo-reactively generating a radical or acid or cross-linking by way of a separate photo-initiator.

13. The method of claim 12 , wherein the first and second bond parts are formed with at least one material selected from the group consisting of compounds respectively including an acryl group, a methacryl group, a cinnamoyl group, and an epoxy group.

14. The method of claim 8 , wherein in the step of forming the cured resist pattern, the light exposure is performed at a wavelength of about 365 nm for about one to about two minutes.

15. The method of claim 9 , wherein in the heat-treating the resist pattern, the heat-treatment is performed at about 200° C. to about 250° C. for about 30 minutes to about one hour.

16. The method of claim 8 , wherein in the forming the cured resist pattern, the first and second bond parts are photo-reactively cross-linked with each other.

17. The method of claim 9 , wherein in the heat-treating the resist pattern, the core part is denatured into a low-molecular structure.