Enhanced thermal dissipation ball grid array package
View Patent ↗In a semiconductor chip, a thermal adhesive is used to bond an internal heat spreader to an active functional die. In an alternative embodiment a dummy die is place directly on top of the active functional die and a thermal adhesive is used to bond an internal heat spreader to the dummy die. This provides a direct and relatively low thermal conductivity path from the heat source, i.e., the functional device to the top of the package, that is, the internal metal heat spreader which is also exposed to the air.
1. A semiconductor package comprising:
a semiconductor die having a fabricated pattern and bond pads;
a heat spreader;
a dummy semiconductor die in physical contact with the semiconductor die; and
a thermal adhesive between the dummy semiconductor die and the heat spreader;
wherein the thermal adhesive adheres the dummy semiconductor die and the heat spreader and conducts heat from the semiconductor die to the heat spreader.
2. The semiconductor package of claim 1 , wherein the thermal adhesive comprises:
a thermal interface material which comprises a thermal adhesive epoxy film, a thermal adhesive epoxy paste or combination thereof;
a phase change material (PCM);
a thermal gel; or
a combination thereof.
3. The semiconductor package of claim 1 , further comprising a mold compound encapsulating the semiconductor die, the heat spreader, and the thermal adhesive.
4. The semiconductor package of claim 1 , wherein the semiconductor package is of a type selected from the group consisting of dual in-line package (DIP) packaging, pin grid array (PGA) packaging, leadless chip carrier (LCC) packaging, small-outline integrated circuit (SOIC) packaging, plastic leaded chip carrier (PLCC) packaging, plastic quad flat pack (PQFP) packaging and thin quad flat pack (TQFP) packaging, thin small-outline packages (TSOP) packaging, land grid array (LGA) packaging and Quad-Flat No-lead (QFN) packaging.
5. A semiconductor package comprising:
a fabricated semiconductor die having a fabricated pattern and bond pads;
a dummy semiconductor die placed on top of the fabricated semiconductor die and being in physical contact there with;
a heat spreader placed on top of the dummy semiconductor die; and
a first thermal adhesive between the dummy semiconductor die and the heat spreader;
wherein the first thermal adhesive adheres the dummy semiconductor die and the heat spreader and conducts heat from the dummy semiconductor die to the heat spreader and wherein the dummy semiconductor die conducts heat from the fabricated semiconductor die.
6. The semiconductor package of claim 5 , wherein the thermal adhesive comprises:
a thermal interface material which comprises a thermal adhesive epoxy film, a thermal adhesive epoxy paste or combination thereof;
a phase change material (PCM);
a thermal gel; or
a combination thereof.
7. The semiconductor package of claim 5 further comprising a second thermal adhesive between the dummy semiconductor die and the fabricated semiconductor die, wherein the second thermal adhesive adheres the fabricated semiconductor die and the dummy semiconductor die and conducts heat from the fabricated semiconductor die to the dummy semiconductor die.
8. The semiconductor package of claim 7 , wherein the first and/or second thermal adhesive comprises a thermal interface material which comprises a thermal adhesive epoxy film, a thermal adhesive epoxy paste or combination thereof.
9. The semiconductor package of claim 8 , wherein the thermal adhesive epoxy film comprises a particle-laden one-component material, a particle-laden two component material or combination thereof.
10. The semiconductor package of claim 8 , where the first and/or second thermal adhesive comprises a phase change material (PCM).
11. The semiconductor package of claim 7 , wherein the first and/or second thermal adhesive comprises a thermal gel.
12. The semiconductor package of claim 5 , wherein the dummy semiconductor die is an unfabricated semiconductor die or a waste fabricated semiconductor die.
13. The semiconductor package of claim 5 , further comprising a mold compound encapsulating the semiconductor die, the heat spreader, and the thermal adhesive.
14. The semiconductor package of claim 5 , wherein the semiconductor package is of a type selected from the group consisting of DIP packaging, PGA packaging, LCC packaging, SOIC packaging, PLCC packaging, PDFQ packaging and TQFP packaging, TSOP packaging, LGA packaging and QFN packaging.
15. The semiconductor package of claim 5 wherein the dummy semiconductor die is in physical contact with the fabricated semiconductor die and no additional material is placed in between the dummy semiconductor die is in physical contact and the fabricated semiconductor die.
16. The semiconductor package of claim 1 wherein the dummy semiconductor die in placed in contact with the semiconductor die to avoid manufacturing costs associated with placing a thermal adhesive between the dummy semiconductor and the semiconductor die.
17. The semiconductor package of claim 6 wherein the dummy semiconductor die in placed on top of the fabricated semiconductor die to avoid manufacturing costs associated with placing a thermal adhesive between the dummy semiconductor and the fabricated semiconductor die.