Vertical transistor and vertical transistor array
A vertical transistor including a substrate, a gate, a base line and a gate dielectric layer is provided. The substrate includes a pillar protruding out of a surface of the substrate. The pillar includes a first doped region, a channel region and a second doped region from bottom to top. The gate is disposed on a sidewall at one side of the channel region. The base line is disposed on a sidewall at the other side of the channel region and not contacted with the gate. The gate dielectric layer is disposed between the gate and the channel region.
1. A vertical transistor, comprising:
a substrate, having a pillar protruding out of a surface of the substrate, and the pillar comprising a first doped region, a channel region and a second doped region from bottom to top;
a gate, disposed on a sidewall at one side of the channel region;
a base line, disposed on a sidewall at another side of the channel region, and keeping a distance with the gate; and
a gate dielectric layer, disposed between the gate and the channel region.
2. The vertical transistor as claimed in claim 1 , further comprising a bit line disposed on a sidewall of the first doped region.
3. The vertical transistor as claimed in claim 2 , wherein a material of the bit line comprises tungsten.
4. The vertical transistor as claimed in claim 2 , wherein the first doped region and the second doped region have the same conductive type.
5. The vertical transistor as claimed in claim 1 , wherein a material of the gate comprises tungsten.
6. The vertical transistor as claimed in claim 1 , wherein a material of the base line comprises tungsten.
7. The vertical transistor as claimed in claim 1 , wherein the gate comprises a surrounding gate.
8. A vertical transistor array, comprising:
a substrate, having a plurality of pillars protruding out of a surface of the substrate, wherein each of the pillars comprises a first doped region, a channel region and a second doped region from bottom to top, and the pillars are arranged along a first direction and a second direction;
a plurality of surrounding gate lines, extending along the first direction, wherein each of the surrounding gate lines is disposed on a sidewall at one side of the channel regions of the pillars;
a plurality of base lines, extending along the first direction, wherein each of the base lines is disposed on a sidewall at the other side of the channel regions of the pillars and is electrically connected to the channel regions of the pillars, and the same ends of the base lines in the first direction are mutually and electrically connected; and
a gate dielectric layer, disposed between the surrounding gate line and the channel regions of the pillars.
9. The vertical transistor array as claimed in claim 8 , wherein the first direction is perpendicular to the second direction.
10. The vertical transistor array as claimed in claim 9 , further comprising a plurality of bit lines extending along the second direction, wherein each of the bit lines is electrically connected to the first doped regions of the pillars.
11. The vertical transistor array as claimed in claim 10 , further comprising a connecting lead extending along the second direction and electrically connected to the base lines.
12. The vertical transistor array as claimed in claim 8 , wherein a material of the surrounding gate line comprises tungsten.
13. The vertical transistor array as claimed in claim 8 , wherein a material of the base line comprises tungsten.