Method of manufacturing a TFT array panel
View Patent ↗Multi-layered wiring for a larger flat panel display is formed by depositing molybdenum on a substrate in presence of a precursor gas containing at least one oxygen, nitrogen and carbon to form a molybdenum layer. An aluminum layer is deposited on the molybdenum layer. Another metal layer may be formed on the aluminum layer. The molybdenum layer has a face-centered cubic (FCC) lattice structure with a preferred orientation of (111).
1. A method for fabricating a thin film transistor (TFT) array panel, comprising steps of:
depositing a molybdenum layer on a substrate in the presence of a precursor gas containing at least one impurity selected from a group consisting of oxygen, nitrogen and carbon;
depositing an aluminum layer on the molybdenum layer; and
depositing a metal layer on the aluminum layer,
wherein the aluminum layer has an orientation of (111).
2. The method of claim 1 , wherein the molybdenum layer is formed by sputtering.
3. The method of claim 1 , wherein the molybdenum layer is formed by evaporation.
4. The method of claim 1 , wherein the precursor gas contains at least one selected from a group consisting of nitrogen gas, oxygen gas, air, carbon dioxide, carbon oxide, methane and ammonia.
5. The method of claim 1 , wherein the molybdenum layer contains the impurity by about 0.01 to about 30 atom%.
6. The method of claim 4 , wherein the molybdenum layer contains the impurity by about 0.01 to about 30 atom%.