Photodiode having increased proportion of light-sensitive area to light-insensitive area
View Patent ↗A photodiode having an increased proportion of light-sensitive area to light-insensitive area includes a semiconductor having a backside surface and a light-sensitive frontside surface. The semiconductor includes a first active layer having a first conductivity, a second active layer having a second conductivity opposite the first conductivity, and an intrinsic layer separating the first and second active layers. A plurality of isolation trenches are arranged to divide the photodiode into a plurality of cells. Each cell has a total frontside area including a cell active frontside area sensitive to light and a cell inactive frontside area not sensitive to light. The cell active frontside area forms at least 95 percent of the cell total frontside area. A method of forming the photodiode is also disclosed.
1. A method of manufacturing a photodiode having an increased proportion of light-sensitive area to light-insensitive area, the method comprising:
providing a semiconductor having a frontside surface and a backside surface and including:
a first active layer having a first conductivity,
a second active layer having a second conductivity opposite the first conductivity, and
an intrinsic layer separating the first and second active layers;
forming isolation trenches arranged to divide the photodiode into a plurality of cells, wherein the isolation trenches have a depth to width ratio of at least 5.0;
forming a via in each cell, wherein each via has a length to diameter ratio of at least 7.0; and
forming a frontside electrical contact for each cell in electrical communication with the second active layer and the via, each cell having a total frontside area including a cell active frontside area sensitive to light and a cell inactive frontside area not sensitive to light, and the cell active frontside area forming at least 95 percent of the cell total frontside area.
2. The method of manufacturing a photodiode of claim 1 , wherein each via has a via frontside area forming a portion of the cell inactive frontside area and each frontside electrical contact has an electrical contact frontside area also forming a portion of the cell inactive frontside area.
3. The method of manufacturing a photodiode of claim 2 , wherein the electrical contact frontside area is less than 4 percent of the cell total frontside area.
4. The method of manufacturing a photodiode of claim 2 , wherein the via frontside area is less than 2 percent of the cell total frontside area.
5. The method of manufacturing a photodiode of claim 1 , wherein:
the isolation trenches together define a trench inactive frontside area;
the frontside of the semiconductor has a total area including a semiconductor active area equal to the sum of each cell active frontside area and a semiconductor inactive area including each cell inactive frontside area and the trench inactive frontside area; and
the semiconductor active area forms at least 90 percent of the semiconductor total area.
6. The method of manufacturing a photodiode of claim 1 , the method further comprising: forming at least one cathode contact pad on the semiconductor backside surface and a step of forming at least one anode contact pad on the semiconductor backside surface.
7. The method of manufacturing a photodiode of claim 1 , the method further comprising: forming an oxide layer on one of the frontside and backside of the semiconductor.