Single line MRAM

1. A magnetic memory device comprising:

a first electrode electrically coupled to a write current source, the first electrode providing a write current path along a length of the first electrode, and passing a current along the write current path generates a magnetic field;

a second electrode; and

magnetic tunnel junction electrically coupled to and separating the first electrode from the second electrode and the magnetic tunnel junction comprises a free magnetic layer having a magnetization orientation that is switchable between a high resistance state magnetization orientation and a low resistance state magnetization orientation, the free magnetic layer is spaced from the first electrode a distance of less than 10 nanometers, and the magnetic field switches the free magnetic layer magnetization orientation between a high resistance state magnetization orientation and a low resistance state magnetization orientation; and

a permalloy layer separates the first electrode from the free magnetic layer;

wherein the magnetic memory device generates the magnetic field solely by the write current passing along the first electrode.

2. A magnetic memory device according to claim 1 , wherein the write current path defines a first horizontal plane and the free layer magnetization orientation defines a second horizontal plane, and the first horizontal plane is parallel to the second horizontal plane.

3. A magnetic memory device according to claim 1 , wherein a read current path passes current from the first electrode, through the magnetic tunnel junction and to the second electrode, the read current path being orthogonal to the write current path.

4. A magnetic memory device according to claim 1 , wherein the magnetic tunnel junction comprises the free magnetic layer separated from a reference layer by a non-magnetic, electrically insulating tunneling barrier.

5. A magnetic memory device according to claim 1 , wherein the magnetic tunnel junction comprises the free magnetic layer separated from a reference layer by a non-magnetic, electrically conductive tunneling barrier.

6. A magnetic memory device according to claim 1 , wherein passing a current along the write current path in a first direction switches the free magnetic layer magnetization orientation from a high resistance state magnetization orientation to a low resistance state magnetization orientation, and passing a current along the write current path in an opposing second direction switches the free magnetic layer magnetization orientation from a low resistance state magnetization orientation to a high resistance state magnetization orientation.

7. A magnetic memory device according to claim 1 , wherein the first electrode comprises a layer of permalloy.

8. A magnetic memory device according to claim 1 , wherein the high resistance state magnetization orientation and a low resistance state magnetization orientation forms an angle with the current path in a range from 10 to 80 degrees.

9. A magnetic memory device comprising:

a first electrode electrically coupled to a write current source, the first electrode providing a write current path along a length of the first electrode, and passing a current along the write current path generates a magnetic field, the first electrode comprising a layer of permalloy;

a second electrode; and

magnetic tunnel junction electrically coupled to and separating the first electrode from the second electrode and the magnetic tunnel junction comprises a free magnetic layer having a magnetization orientation that is switchable between a high resistance state magnetization orientation and a low resistance state magnetization orientation, and the magnetic field switches the free magnetic layer magnetization orientation between a high resistance state magnetization orientation and a low resistance state magnetization orientation; and

a permalloy layer separates the first electrode from the free magnetic layer;

wherein the magnetic memory device switches the free magnetic layer magnetization orientation between a high resistance state magnetization orientation and a low resistance state magnetization orientation with only a single write current and to generates the magnetic field solely by the write current passing along the first electrode.

10. A magnetic memory device according to claim 9 , wherein the free magnetic layer is spaced from the first electrode a distance of less than 10 nanometers.

11. A magnetic memory device according to claim 9 , wherein the high resistance state magnetization orientation and a low resistance state magnetization orientation forms an angle with the current path in a range from 10 to 80 degrees.

12. A magnetic memory device according to claim 9 , wherein the first electrode is defined by opposing first and second surfaces and opposing third and fourth surfaces, the third and fourth surfaces are orthogonal to the first and second surfaces, and permalloy is disposed on two of the first, second, third and fourth surfaces.

13. A magnetic memory device according to claim 12 , wherein the permalloy is disposed on three of the first, second, third and fourth surfaces.

14. A magnetic memory device according to claim 9 , wherein the magnetic tunnel junction comprises the free magnetic layer separated from a reference layer by a non-magnetic, electrically insulating tunneling barrier.

15. A magnetic memory device according to claim 9 , wherein the magnetic tunnel junction comprises the free magnetic layer separated from a reference layer by a non-magnetic, electrically conductive tunneling barrier.

16. A magnetic memory device according to claim 9 , wherein the write current path defines a first horizontal plane and the free layer magnetization orientation defines a second horizontal plane, and the first horizontal plane is parallel to the second horizontal plane.

17. A magnetic memory device comprising:

a first electrode comprising a layer of permalloy and electrically coupled to a write current source, the first electrode providing a write current path along a length of the first electrode, and passing a current along the write current path generates a magnetic field;

a second electrode; and

magnetic tunnel junction electrically coupled to and separating the first electrode from the second electrode and the magnetic tunnel junction comprises a free magnetic layer having a magnetization orientation that is switchable between a high resistance state magnetization orientation and a low resistance state magnetization orientation, and the magnetic field switches the free magnetic layer magnetization orientation between a high resistance state magnetization orientation and a low resistance state magnetization orientation, and the high resistance state magnetization orientation and a low resistance state magnetization orientation forms an angle with the current path in a range from 10 to 80 degrees; and

the permalloy layer separates the first electrode from the free magnetic layer;

wherein the magnetic memory does not pass a write current through the second electrode and generates the magnetic field solely by the write current passing along the first electrode.

18. A magnetic memory device according to claim 17 , wherein the free magnetic layer is spaced from the first electrode a distance of less than 10 nanometers.

19. A magnetic memory device according to claim 17 , wherein the write current path defines a first horizontal plane and the free layer magnetization orientation defines a second horizontal plane, and the first horizontal plane is parallel to the second horizontal plane.