PMOS depletable drain extension made from NMOS dual depletable drain extensions
View Patent ↗In accordance with an embodiment of the invention, there is an integrated circuit device having a complementary integrated circuit structure comprising a first MOS device. The first MOS device comprises a source doped to a first conductivity type, a drain extension doped to the first conductivity type separated from the source by a gate, and an extension region doped to a second conductivity type underlying at least a portion of the drain extension adjacent to the gate. The integrated circuit structure also comprises a second complementary MOS device comprising a dual drain extension structure.
1. A complementary integrated circuit structure comprising:
a first MOS device comprising,
a first gate;
a source doped to a first conductivity type;
a drain extension doped to the first conductivity type separated from the source by the first gate;
a drain contact doped to the first conductivity type; and
an extension region doped to a second conductivity type underlying at least a portion of the drain extension adjacent to the first gate;
a second complementary MOS device comprising,
a second gate;
a dual drain extension structure; and
an island doped to the first conductivity type underlying the first gate and the second gate,
wherein,
the drain contact of the first MOS device contacts the island; and
the first conductivity type is one of N-type and P-type, and the second conductivity type is the other one of N-type and P-type.
2. The complementary integrated circuit structure according to claim 1 , wherein the drain extension in the first MOS device is formed from a layer that forms a drain extension in the second complementary MOS device.
3. The complementary integrated circuit structure according to claim 1 , wherein the extension region in the first MOS device is formed from a layer that forms an extension region in the second complementary MOS device.
4. The complementary integrated circuit structure according to claim 1 wherein first MOS device further comprises:
a body contact contacting the extension region and doped to the second conductivity type; and
the drain contact further contacts the drain extension.
5. The complementary integrated circuit structure according to claim 1 further comprising:
a field region disposed adjacent to the drain extension.
6. The complementary integrated circuit structure according to claim 1 , wherein the drain extension has a net doping concentration of about 5E11 ions/cm 2 to about 1.5E12 ions/cm 2 .
7. The complementary integrated circuit structure according to claim 1 , wherein the extension region has a net doping concentration of about 1E12 ions/cm 2 to about 3E12 ions/cm 2 .
8. The complementary integrated circuit structure according to claim 1 further comprising:
a link layer doped to the first conductivity type contacting the drain extension and a channel disposed under the gate, wherein the link layer has a higher dopant concentration than the drain extension.
9. The complementary integrated circuit structure according to claim 1 further comprising:
a well doped to the second conductivity type surrounding the source.
10. The complementary integrated circuit structure according to claim 8 , wherein the link layer has a length of about 0.5 μm to about 5.0 μm.
11. The complementary integrated circuit structure according to claim 1 wherein the extension region surrounds the drain extension.
12. A complementary integrated circuit structure comprising:
a first MOS device comprising,
a first gate;
a first source doped to a first conductivity type;
a drain contact doped to the first conductivity type; and
a single drain extension separated from the first source by a first gate; and
a second complementary MOS device comprising;
a second gate;
a second source doped to a second conductivity type;
a dual drain extension separated from the second source by a second gate,
an island doped to the first conductivity type underlying the first gate and the second gate,
wherein the first conductivity type is one of N-type and P-type, and the second conductivity type is the other one of N-type and P-type.
13. The complementary integrated circuit structure according to claim 12 , wherein the single drain extension comprises a layer that is also used in the dual drain extension.
14. The complementary integrated circuit structure according to claim 12 , wherein the single drain extension totally depletes at a reverse drain to body bias before breakdown occurs at a drain extension to body junction under an edge of the first gate.
15. The complementary integrated circuit structure according to claim 12 , further comprising:
a link layer doped to the first conductivity type contacting the single drain extension and a first channel disposed under the first gate, wherein the link layer has a higher dopant concentration than the drain extension.
16. The complementary integrated circuit structure according to claim 15 , wherein the single drain extension totally depletes at a drain to body reverse bias below that at which a link layer to body junction under an edge of the first gate breaks down.
17. The complementary integrated circuit structure according to claim 12 , wherein the first source is disposed in a first well doped to the second conductivity type.
18. The complementary integrated circuit structure according to claim 12 , wherein the first MOS device and the second complementary MOS device have a breakdown voltage greater than about 50V.
19. The complementary integrated circuit structure according to claim 17 , wherein a portion of the single drain extension is disposed in the first well.