Light-emitting element
View Patent ↗A light-emitting element includes a n-type silicon oxide film and a p-type silicon nitride film. The n-type silicon oxide film and the p-type silicon nitride film formed on the n-type silicon oxide film form a p-n junction. The n-type silicon oxide film includes a plurality of quantum dots composed of n-type Si while the p-type silicon nitride film includes a plurality of quantum dots composed of p-type Si. Light emission occurs from the boundary between the n-type silicon oxide film and the p-type silicon nitride film by injecting electrons from the n-type silicon oxide film side and holes from the p-type silicon nitride film side.
1. A light-emitting element comprising:
a first insulator including first quantum dots with a first conduction type; and
a second insulator including second quantum dots with a second conduction type that is different from the first conduction type, the second insulator being disposed on the first insulator.
2. The light-emitting element according to claim 1 , wherein the first insulator includes a plurality of the first quantum dots, and the second insulator includes a plurality of the second quantum dots.
3. The light-emitting element according to claim 2 , wherein the plurality of first quantum dots are irregularly arranged in a thickness direction of the first insulator, and the plurality of second quantum dots are irregularly arranged in a thickness direction of the second insulator.
4. The light-emitting element according to claim 1 , wherein the first conduction type is n-type, and the second conduction type is p-type.
5. The light-emitting element according to claim 4 , wherein a barrier energy against holes is larger than a barrier energy against electrons in the first insulator, and a barrier energy against electrons is larger than a barrier energy against holes in the second insulator.
6. The light-emitting element according to claim 5 , wherein the first quantum dots and the second quantum dots are composed of silicon dots; the first insulator is composed of a silicon oxide film; and the second insulator is composed of a silicon nitride film.
7. The light-emitting element according to claim 4 , further comprising a third insulator formed on the second insulator and including third quantum dots with the second conduction type, the third insulator having a larger barrier energy against electrons than the second insulator.
8. The light-emitting element according to claim 7 , wherein the third insulator includes a plurality of the third quantum dots.
9. The light-emitting element according to claim 8 , wherein the plurality of third quantum dots are irregularly arranged in a thickness direction of the third insulator.
10. The light-emitting element according to claim 9 , wherein the first quantum dots, the second quantum dots, and the third quantum dots are composed of silicon dots; the first insulator is composed of a silicon oxide film; the second insulator is composed of a silicon nitride film; and the third insulator is composed of a silicon oxynitride film.
11. A light-emitting element comprising:
a light-emitting layer;
a first insulator supplying electrons to the light-emitting layer through n-type quantum dots; and
a second insulator supplying holes to the light-emitting layer through p-type quantum dots.
12. The light-emitting element according to claim 11 , wherein the first insulator is composed of a silicon oxide film and the second insulator is composed of a silicon nitride film.