Stacked electro-optically active organic diode with inorganic semiconductor connection layer
View Patent ↗A stacked electro-optically active organic diode has an anode electrode ( 102 ), a cathode electrode ( 162 ), a first electro-optically active organic layer ( 110 ) arranged between the electrodes ( 102, 162 ), and a second electro-optically active organic layer ( 130 ) arranged between said first active organic layer ( 110 ) and said cathode ( 162 ). A low electron affinity layer ( 120 ) is arranged between the first electro-optically active organic layer ( 110 ) and the second electro-optically active organic layer ( 130 ), and is formed of a first transparent inorganic semi-conductor material. A high electron affinity layer ( 121 ) is arranged between said second electro-optically active organic layer ( 130 ) and the low electron affinity layer ( 120 ), and is formed of a second transparent inorganic semiconductor material, wherein said second transparent inorganic semiconductor material has a higher electron affinity than said first inorganic semiconductor material. The low and high affinity layers ( 120, 121 ) constitute a connection layer of only two semiconductor (sub-)layers which allow for transparent, thick layers, and as a result the diode can be both efficient and reliable.
1. A stacked electro-optically active organic diode comprising:
an anode electrode layer;
a cathode electrode layer;
a first electro-optically active organic layer arranged between said electrode layers;
a second electro-optically active organic layer arranged between said first electro-optically active organic layer and said cathode electrode layer;
a low electron affinity layer arranged between the first electro-optically active organic layer and the second electro-optically active organic layer, said low electron affinity layer having a thickness of at least 50 Å and being formed of a first transparent inorganic semiconductor material; and
a high electron affinity layer arranged between said second electro-optically active organic layer and the low electron affinity layer, said high electron affinity layer being formed of a second transparent inorganic semiconductor material, wherein said second transparent inorganic semiconductor material has a higher electron affinity than said first inorganic semiconductor material.
2. The stacked organic diode stack as claimed in claim 1 , wherein the first inorganic semiconductor material has an electron affinity between 0.5 eV and 3.5 eV.
3. The stacked organic diode stack as claimed in claim 1 , wherein the second inorganic semiconductor material has an electron affinity between 4 eV and 8 eV.
4. The stacked organic diode as claimed in claim 1 , wherein the low electron affinity layer has a thickness above 200 Å.
5. The stacked organic diode as claimed in claim 1 , wherein the high electron affinity layer has a thickness of at least 20 Å.
6. The stacked organic diode as claimed in claim 1 , wherein the first inorganic semiconductor material and/or second inorganic semiconductor material has higher melting temperature than the material of the cathode layer.
7. The stacked organic diode as claimed in claim 1 , wherein the first inorganic semiconductor material has a band gap greater than 2.7 eV.
8. The stacked organic diode as claimed in claim 1 , wherein the first inorganic semiconductor material comprises a chalcogenide or binary oxide of an alkali earth metal or lanthanide.
9. The stacked organic diode as claimed in claim 1 , wherein the second inorganic semiconductor material comprises a binary oxide of a transition metal.
10. The stacked organic diode as claimed in claim 1 , further comprising:
a protection layer formed of an inorganic semiconductor material and arranged between the cathode electrode layer and the second electro-optically active organic layer, and adjacent to said cathode electrode layer.
11. The stacked organic diode as claimed in claim 1 , further comprising: a cover layer arranged in contact with a surface of the cathode layer so that the cathode layer is positioned between the second electro-optically active organic layer and said cover layer, wherein said cover layer is formed of a substantially inert material with respect to a cathode layer material in contact with said cover layer, and wherein said inert material is deposited on said surface of said cathode layer.
12. The stacked organic diode as claimed in claim 1 , wherein the high electron affinity layer has a thickness above 200 Å.
13. The stacked organic diode as claimed in claim 1 ,wherein the first inorganic semiconductor material comprises BaO, BaSe, La 2 O 3 , or Ce 2 O 3 .
14. The stacked organic diode as claimed in claim 1 , wherein the second inorganic semiconductor material comprises WO 3 , MoO 3 or V 2 O 5 .