Semiconductor device

1. A semiconductor device comprising:

a doped substrate of a first doping polarity;

a doped semiconductor material of a second doping polarity, wherein the semiconductor material of the second doping polarity is on, or in, the substrate, and wherein the second doping polarity is opposite the first doping polarity such that the semiconductor material of the second doping polarity and the substrate form a diode;

an inductor on or above the semiconductor material of the second doping polarity; and

a pattern in the semiconductor material of the second doping polarity for reducing eddy currents, wherein the pattern comprises:

a doped semiconductor material of the first doping polarity arranged so as to reduce eddy currents; and

at least one trench within the doped semiconductor material of the first doping polarity, the trench being arranged so as to reduce eddy currents, wherein, at least at a depth at which the trench is closest to the inductor, the doped semiconductor material of the first doping polarity fully surrounds the trench so that, at least at said depth, the trench does not touch the doped semiconductor material of the second doping polarity.

2. A semiconductor device according to claim 1 , wherein the semiconductor material of the first doping polarity is arranged to reduce eddy currents in the semiconductor material of the second doping polarity.

3. A semiconductor device according to claim 1 , wherein the at least one trench is arranged to reduce eddy currents in the semiconductor material of the second doping polarity.

4. A semiconductor device according to claim 1 , wherein the inductor comprises a coil.

5. A semiconductor device according to claim 4 , wherein the inductor coil is balanced, center-tapped, symmetric or counter-wound.

6. A semiconductor device according to claim 1 , wherein the inductor comprises a spiral.

7. A semiconductor device according to claim 1 , wherein the pattern extends beyond the area covered by the inductor.

8. A semiconductor device according to claim 1 , wherein the pattern does not reach the substrate.

9. A semiconductor device according to claim 1 , wherein the pattern reaches the substrate.

10. A semiconductor device according to claim 9 , wherein the doped semiconductor material of the first doping polarity reaches the substrate.

11. A semiconductor device according to claim 9 , wherein the at least one trench reaches the substrate.

12. A semiconductor device according to claim 1 , wherein portions of the pattern cross portions of the inductor at an angle of between 60 and 120 degrees.

13. A semiconductor device according to claim 1 , wherein the at least one trench is filled with an insulating material.

14. A semiconductor device according to claim 1 , wherein the doped semiconductor material of the first doping polarity comprises a well formed in the doped semiconductor material of the second doping polarity.

15. A semiconductor device according to claim 14 , wherein the well of the pattern comprises portions which are arranged substantially so as to form a star, “plus” sign, cross or snowflake shape.

16. A semiconductor device according to claim 14 , wherein the well of the pattern comprises portions which cross each other in a position which corresponds to the center of the inductor.

17. A semiconductor device according to claim 1 , wherein the pattern comprises an arrangement of trenches.

18. A semiconductor device according to claim 17 , wherein the trenches are arranged so as to substantially form a star, “plus” sign, cross or snowflake shape.

19. A semiconductor device according to claim 17 , wherein the trenches do not cross each other.

20. A semiconductor device according to claim 17 , wherein an extrapolation of the trenches radiates out from a position which corresponds to the center of the inductor.

21. A semiconductor device according to claim 17 , wherein the arrangement of trenches comprises a trench which runs through a position which corresponds to the center of the inductor.

22. A semiconductor device comprising:

a doped substrate of a first doping polarity;

a doped semiconductor material of a second doping polarity, wherein the semiconductor material is on, or in, the substrate, and wherein the second doping polarity is opposite the first doping polarity such that the semiconductor material and the substrate form a diode;

an inductor on or above the semiconductor material; and

a pattern in the semiconductor material for reducing eddy currents, wherein the pattern comprises:

a doped semiconductor material of the first doping polarity; and

at least one trench within the doped semiconductor material of the first doping polarity, the trench having a depth of at least 1 micrometer, wherein, at least at a depth at which the trench is closest to the inductor, the doped semiconductor material of the first doping polarity fully surrounds the trench so that, at least at said depth, the trench does not touch the doped semiconductor material of the second doping polarity.

23. A semiconductor device comprising:

a doped substrate of a first doping polarity;

a doped semiconductor material of a second doping polarity, wherein the semiconductor material is on, or in, the substrate, and wherein the second doping polarity is opposite the first doping polarity such that the semiconductor material and the substrate form a diode;

an inductor on or above the semiconductor material; and

a pattern in the semiconductor material for reducing eddy currents, wherein the pattern comprises:

a doped semiconductor material of the first doping polarity; and

at least two substantially straight trenches within the doped semiconductor material of the first doping polarity, wherein, at least at a depth at which the trenches are closest to the inductor, the doped semiconductor material of the first doping polarity fully surrounds the trenches so that, at least at said depth, the trenches do not touch the doped semiconductor material of the second doping polarity, wherein the at least two trenches do not touch or cross each other.