Semiconductor light emitting element and method for manufacturing same
View Patent ↗A semiconductor light-emitting device according to the present invention includes: a GaN substrate 1 containing an n-type impurity and being made of silicon carbide or a nitride semiconductor; a multilayer structure 10 provided on a main surface of the GaN substrate 1 ; a p-electrode 17 formed on the multilayer structure 10 ; a first n-electrode 18 substantially covering the entire rear surface of the GaN substrate 1 ; and a second n-electrode 20 provided on the first n-electrode 18 so as to expose at least a portion of the periphery of the first n-electrode 18.
1. A semiconductor light-emitting device comprising:
a semiconductor substrate containing an n-type impurity and being made of silicon carbide or a nitride semiconductor;
an n-type semiconductor layer provided on a main surface of the semiconductor substrate;
an active layer provided on the n-type semiconductor layer;
a p-type semiconductor layer provided on the active layer;
a p-electrode in contact with the p-type semiconductor layer; and
an n-electrode in contact with a surface of the semiconductor substrate opposite from the main surface, wherein,
the n-electrode includes a first n-electrode which substantially covers the entire surface of the semiconductor substrate opposite from the main surface and a second n-electrode provided on the first n-electrode so as to expose at least a portion of a periphery of the first n-electrode,
a portion of a side face of a multilayer structure constitutes a cavity end face, the multilayer structure including the n-type semiconductor layer, the active layer, and the p-type semiconductor layer; and
the second n-electrode is provided so as to expose a portion of the periphery of the first n-electrode that extends along the cavity end face.