Insulating layer, electronic device, field effect transistor, and polyvinylthiophenol
View Patent ↗Provided is an insulating layer that can improve device characteristics of an electronic device including the insulating layer. The insulating layer contains a polymer insulating substance having repeating units represented by the following formula: wherein R a represents a direct bond or any linking group, Ar represents a divalent aromatic group optionally having a substituent, and R b represents a hydrogen atom, a fluorine atom, or a univalent organic group.
1. An insulating layer comprising:
a polymer comprising at least repeating units of Formula (A):
wherein
R a represents a direct bond
Ar represents a divalent aromatic group optionally having a substituent, and
R b represents a hydrogen atom, a fluorine atom, or a univalent organic group.
2. The insulating layer according to claim 1 , wherein Ar is a hydrocarbon aromatic ring optionally having a substituent.
3. The insulating layer according to claim 1 , wherein R b is a hydrogen atom or a linear or branched hydrocarbon group.
4. The insulating layer according to claim 1 , wherein the repeating unit of Formula (A) is at least one of vinylthiophenol and a vinylthiophenol derivative.
5. The insulating layer according to claim 1 , wherein the polymer further comprises repeating units of a crosslinkable vinyl monomer.
6. The insulation layer according to claim 5 , wherein the crosslinkable vinyl monomer comprises a side chain carbon-carbon double bond capable of dimerization by irradiation with light or heat.
7. The insulation layer according to claim 6 , wherein the crosslinkable vinyl monomer is at least one of vinyl 3-phenylpropenoate and vinyl 6-phenyl-2,4-pentadienoate.
8. The insulating layer according to claim 5 , wherein a mole fraction of the crosslinkable vinyl monomer in the polymer is from 0.1 to 0.9.
9. The insulating layer according to claim 1 , wherein the polymer further comprises repeating units of a heat-resistant vinyl monomer.
10. The insulating layer according to claim 1 , wherein an electrical conductivity of the insulating layer is 1×10 −12 S/cm or less.
11. An electronic device comprising an insulating layer according to claim 1 .
12. A field-effect transistor comprising an insulating layer according to claim 1 .
13. The field-effect transistor according to claim 12 , further comprising a semiconductor layer containing porphyrin, a source electrode, a drain electrode, and a gate electrode.
14. The insulating layer according to claim 1 , wherein R b is a univalent organic group selected from the group consisting of CH 3 —, CF 3 —, CH 3 (CH 2 ) n — wherein n is an integer of 1 or more and 23 or less and a C-6 alkyl carboxyl group.
15. The insulating layer according to claim 1 , wherein the optional substituent of the divalent aromatic group is at least one selected from the group consisting of a halogen, a linear, branched, or cyclic alkyl group having 1 or more and 24 or less carbon atoms, a fluorine substituted linear, branched, or cyclic alkyl group having 1 or more and 24 or less carbon atoms, an aryl group, a cyano group, a carboxyl group, an alkoxy group, a nitro groups, an amino group, a sulfonic acid group and a hydroxyl group.
16. The insulating layer according to claim 1 , wherein a mole fraction of the repeating unit of Formula (A) in the polymer is 0.1 or greater.
17. A polymer, comprising:
a repeating unit of a crosslinkable vinyl monomer; and
at least one different repeating unit selected from the group consisting of a repeating unit of a vinylthiophenol, and a repeating unit of a vinylthiophenol derivative.
18. A polymer, comprising:
a repeating unit of a heat-resistant vinyl monomer; and
at least one different repeating unit selected from the group consisting of a repeating unit of vinylthiophenol, and a repeating unit of a vinylthiophenol derivative.