IP Library Granted Patent US 7,911,680
Granted Patent B2
US 7,911,680 · App. 12/378,938 · Granted Mar 22, 2011

Micromirror device having a vertical hinge

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Quick Facts
Patent No.
US 7,911,680
App. No.
12/378,938
Granted
Mar 22, 2011
Kind
B2
Abstract

A mirror device comprises: a plurality of electrodes disposed on a substrate; a hinge connected to at least one of the electrodes; a mirror connected to the hinge and corresponding to at least one of the electrodes. The mirror device further comprises a barrier layer is disposed between the hinge and mirror, and/or between the hinge and electrode. Also noted is a mirror device production method for producing such-configured mirror device. Furthermore, this invention discloses a projection apparatus implemented with a mirror device manufactured and assembled according to the configuration as described.

Claims (26)

1. A mirror device, comprising:

a plurality of electrodes disposed on a substrate;

a hinge connected to at least one of the electrodes and the hinge stands on said substrate extending along substantially a vertical direction from the substrate;

said hinge supports a mirror disposed on top of said hinge along substantially a horizontal direction wherein a cross sectional area of said hinge near the electrode is less than or equal to a cross sectional area of said hinge near said mirror; and

a length of the hinge is approximately 2 μm or smaller, and

the mirror is substantially a square mirror wherein each side of said square mirror having a length approximately 10 μm or smaller.

2. The mirror device according to claim 1 , wherein:

the hinge is composed of a silicon containing an arsenic, phosphorous, or a metallic silicide diffused in said silicon.

3. A mirror device comprising:

a plurality of electrodes disposed on a substrate;

a hinge electrically connected to at least one of the electrodes and the hinge stands on said substrate extending along substantially a vertical direction from said substrate;

said hinge supports a mirror disposed on top of said hinge along substantially a horizontal direction wherein a width of said hinge is greater than or equal to a length of said hinge and said length of said hinge is greater than a thickness of said hinge wherein a length of the hinge is approximately 2 μm or smaller, and

the mirror is substantially a square mirror wherein each side of said square mirror having a length approximately 10 μm or smaller.

4. A mirror device, comprising:

an electrode disposed on a substrate;

a hinge connected to the electrode and the hinge stands on said substrate extending along substantially a vertical direction from the substrate; and

said hinge supports a mirror disposed on top of said hinge along substantially a horizontal direction wherein a thickness of the hinge near the electrode is smaller than a thickness of the hinge near the mirror and a length of the hinge is greater than the thickness of said hinge.

5. A mirror device comprising:

a plurality of electrodes disposed on a substrate;

a hinge electrically connected to at least one of the electrodes and the hinge stands on said substrate extending along substantially a vertical direction from said substrate;

said hinge supports a mirror disposed on top of said hinge along substantially a horizontal direction wherein a width of said hinge is greater than or equal to a length of said hinge and said length of said hinge is greater than a thickness of said hinge wherein the hinge is composed of a silicon containing an arsenic, phosphorous, or a metallic silicide diffused in said silicon.

6. A mirror device, comprising:

an electrode disposed on a substrate;

a hinge connected the electrode and the hinge stands on said substrate extending along substantially a vertical direction from the substrate;

said hinge supports a mirror disposed on top of said hinge along substantially a horizontal direction wherein the hinge has a different cross sectional area at an end near the substrate from an end near the mirror; and

the hinge is composed of a silicon containing an arsenic, phosphorous, or a metallic silicide diffused in said silicon.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 18, 2018
From: SILICON QUEST KABUSHIKI-KAISHA(JP); OLYMPUS CORPORATION (JP)
To: IGNITE, INC
Reel/Frame 047204/0909 →
CHANGE OF ADDRESS Recorded Nov 17, 2016
From: OLYMPUS CORPORATION
To: OLYMPUS CORPORATION
Reel/Frame 040644/0864 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 12, 2011
From: ISHII, FUSAO; MAEDA, YOSHIHIRO; ICHIKAWA, HIROTOSHI; SUGIMOTO, NAOYA
To: SILICON QUEST KABUSHIKI-KAISHA; OLYMPUS CORPORATION
Reel/Frame 025626/0424 →