Granted Patent B2

US 8,097,951 · App. 12/379,793 · Granted Jan 17, 2012

Abstract

Claims (33)

1. An integrated circuit comprising:

a wiring layer laminated on a substrate and having a pattern in which is formed a gap for forming a narrow trench and a wide open part contiguous with the gap; and

an interlayer insulation film built up so as to cover the wiring layer; wherein

the pattern of the wiring layer has a corner part present in a portion in which the gap and the open part are connected, the corner part is chamfered, and an end part of the gap is formed in a shape that widens toward the open part;

the chamfered corner part has a first edge parallel to the narrow trench, a second edge that is facing the wide open part and is perpendicular to the first edge, and a slanted edge diagonally crossing each of the first edge and the second edge; and

a width of a part of the gap adjacent to the slanted edge at a position along the gap monotonically increases as the position moves closer to a boundary of the open part defined by an extended line of the second edge.

2. The integrated circuit of claim 1 , wherein

the interlayer insulation film is laminated to a thickness at which all of the gap except the end part is buried beneath the interlayer insulation film.

3. The integrated circuit of claim 2 , wherein

the end part of the gap expands toward the open part up to a width at which the built-up interlayer insulation film forms an indentation inside the gap.

4. The integrated circuit of claim 1 , wherein

a void is formed in the interlayer insulation film at a location that does not include the end part but otherwise corresponds to the gap.

5. The integrated circuit of claim 4 , wherein

a recess is formed in the interlayer insulation film in a wide portion of the end part of the gap;

the void extends toward the end part of the gap, and at an unspecified point on the end part the void opens on a top part thereof and changes into the recess.

6. A method for manufacturing an integrated circuit having a wiring layer laminated on a substrate and having a pattern in which is formed a gap for forming a narrow trench and a wide open part contiguous with the gap, and an interlayer insulation film built up so as to cover the wiring layer, the method comprising:

a wiring layer patterning step for patterning the wiring layer laminated on the substrate, and forming the pattern in which a corner part is present in a portion in which the gap and the open part are connected, the corner part is chamfered, and an end part of the gap is formed in a shape that widens toward the open part, wherein the chamfered corner part has a first edge parallel to the narrow trench, a second edge that is facing the wide open part and is perpendicular to the first edge, and a slanted edge diagonally crossing each of the first edge and the second edge; and

monotonically increasing a width part of the gap adjacent to the slanted edge at a position along the gap as the position moves closer to a boundary of the open part defined by an extended line of the second edge.

7. The method for manufacturing an integrated circuit of claim 6 , comprising an interlayer insulation film laminating step for laminating on the patterned wiring layer the interlayer insulation film of a film thickness at which all of the gap except the end part is buried beneath the interlayer insulation film.

8. The method for manufacturing an integrated circuit of claim 7 , wherein

the end part of the gap expands toward the open part up to a width at which the built-up interlayer insulation film forms an indentation inside the gap.

9. An integrated circuit comprising:

a wiring layer laminated on a substrate and having a pattern in which is formed a gap for forming a narrow trench and a wide open part contiguous with the gap; and

an interlayer insulation film built up so as to cover the wiring layer, wherein

the pattern of the wiring layer has a corner part present in a portion in which the gap and the open part are connected, the corner part is chamfered to form an end part of the gap into a shape that widens toward the open part;

the interlayer insulation film is laminated to a thickness at which all of the gap except the end part is buried beneath the interlayer insulation film;

the interlayer insulation film that has the laminated thickness forms a recess inside the open part;

the end part of the gap expands toward the open part up to a width at which the built-up interlayer insulation film that has the laminated thickness forms an indentation inside the gap, the indentation leads into the recess formed inside the open part;

the chamfered corner part has a first edge parallel to the narrow trench, a second edge that is facing the wide open part and is perpendicular to the first edge, and a slanted edge diagonally crossing each of the first edge and the second edge; and

a width of a part of the gap adjacent to the slanted edge at a position along the gap monotonically increases as the position moves closer to a boundary of the open part defined by an extended line of the second edge.

10. The integrated circuit of claim 9 , wherein

a thickness of the interlayer insulation film is more than one-half of a width of the gap except the end part; and

the end part of the gap expands up to a width of more than twice of the thickness of the interlayer insulation film.

Assignments (8)