Image pickup element performing image detection of high resolution and high image quality and image pickup apparatus including the same
View Patent ↗In a pixel part, in a first active region, a photodiode and a transferring transistor are formed. In a second active region, a resetting transistor is formed. In a pixel part, in a first active region, a photodiode and a transferring transistor are formed. In a second active region, an amplifying transistor is formed. The first and second active regions are respectively the same in shape in image pixel parts. The resetting transistor and the amplifying transistor are shared by the pixel parts.
1. An image sensor comprising a plurality of image pickup elements, wherein each of said image pickup elements comprises:
a first photoelectric conversion element,
a second photoelectric conversion element,
a first transferring transistor, one terminal of which is connected to said first photoelectric conversion element,
a second transferring transistor, one terminal of which is connected to said second photoelectric conversion element,
a reset transistor, one terminal of which is connected to another terminal of said first transferring transistor and another terminal of said second transferring transistor, and
an amplifying transistor, a control terminal of which is connected to said another terminal of said first transferring transistor and said another terminal of said second transferring transistor, wherein:
said plurality of first photoelectric conversion elements are arranged along a first direction;
each of said plurality of second photoelectric conversion elements is arranged along a second direction relative to each of said first photoelectric conversion elements in the same image pickup element;
each of said plurality of first transferring transistors is extended along said second direction from each of said first photoelectric conversion elements in the same image pickup element;
each of said plurality of second transferring transistors is extended along said second direction from each of said second photoelectric conversion elements in the same image pickup element;
each of said plurality of reset transistors is arranged between each of said plurality of first photoelectric conversion elements and each of said plurality of second photoelectric conversion elements;
each of said plurality of amplifying transistors is arranged along said second direction through each of said plurality of second photoelectric conversion elements to each of said plurality of reset transistors; and
said first photoelectric conversion element is the same in shape as said second photoelectric conversion element.
2. The image sensor according to claim 1 , wherein a length of said reset transistor in said second direction is the same as that of said amplifying transistor in said second direction in a plane view.
3. The image sensor according to claim 1 , wherein each of said plurality of reset transistors is arranged between each of said plurality of first photoelectric conversion elements and each of said plurality of second photoelectric conversion elements in the same image pickup element.
4. The image sensor according to claim 3 , wherein each of said plurality of amplifying elements is arranged along said second direction to each of said second photoelectric conversion elements in the same image pickup element.
5. The image sensor according to claim 1 , wherein a length of each of said first and second photoelectric conversion elements in said second direction is shorter than that of each of said first and second photoelectric conversion elements in said first direction in a plane view.
6. The image sensor according to claim 1 , wherein:
a length of each of said reset transistors in said second direction is shorter than that of each of said reset transistors in said first direction; and
a length of each of said amplifying transistors in said second direction is shorter than that of each of said amplifying transistors in said first direction.
7. The image sensor according to claim 6 , wherein:
a length of each control gate of said reset transistors in said second direction is longer than that of each control gate of said reset transistors in said first direction; and
a length of each control gate of said amplifying transistors in said second direction is longer than that of each control gate of said amplifying transistors in said first direction in a plane view.