Mirror device having vertical hinge
View Patent ↗The present invention provides a mirror device, comprising: a substrate; a mirror disposed approximately in parallel to the substrate above the substrate; and a hinge supported on and extended approximately perpendicularly from the substrate for supporting the mirror, wherein the hinge is connected to the mirror with a first edge part of the hinge buried in the mirror.
1. A mirror device, comprising:
a substrate;
a mirror disposed approximately in parallel to the substrate above the substrate; and
a hinge supported on and extended approximately perpendicularly from the substrate for supporting the mirror, wherein the hinge is connected to the mirror with a first edge part of the hinge buried in the mirror; and wherein the hinge is composed of a material comprises a silicon doped with either one of a group III atom and a group V atom.
2. The mirror device according to claim 1 , wherein:
the mirror is composed of a material comprising a silicon (Si)-added aluminum.
3. The mirror device according to claim 1 , wherein:
the hinge is composed the silicon doped with either one of the group III atom and the group V atom by applying an in-situ doping process on the silicon.
4. The mirror device according to claim 1 , wherein:
the hinge is composed of a material selected from a group of materials consisting of an amorphous silicon, a poly-silicon, a single crystal silicon and a silicon germanium and doped with either one of said group III atom and said group V atom.
5. The mirror device according to claim 1 , wherein:
the hinge further having a thickness including both ends of the hinge ranging between 200 angstroms to 1000 angstroms, both ends inclusive.
6. The mirror device according to claim 5 , wherein:
the hinge further having a thickness including both ends of the hinge ranging between 400 angstroms to 800 angstroms.
7. The mirror device according to claim 1 , wherein:
the mirror comprises a first principal surface facing the substrate and a second principal surface opposite the first principle surface functioning as a reflection surface, wherein a distance between the first principal surface and a first end surface of the first edge part facing the substrate is less than or equal to one half of a thickness of the mirror.
8. The mirror device according to claim 1 , wherein:
the hinge extended from the substrate with an angle between the hinge and the substrate ranging substantially between 80 degrees to 90 degrees.
9. The mirror device according to claim 1 , further comprising:
a barrier layer disposed between the mirror and the first edge part of the hinge for preventing a migration through a contact point between the mirror and the hinge.
10. The mirror device according to claim 9 , wherein:
the barrier layer is composed of a selected materials from a group consisting of titanium, tungsten and an aluminum-added silicon material.
11. A mirror device comprising:
a substrate;
a mirror disposed approximately in parallel to the substrate above the substrate;
a hinge supported on and extended approximately perpendicularly from the substrate for supporting the mirror, wherein the hinge is connected to the mirror with a first edge part of the hinge buried in the mirror; and
a barrier layer disposed between the mirror and the first edge part of the hinge for preventing a migration through a contact point between the mirror and the hinge.
12. The mirror device according to claim 11 , wherein:
the barrier layer is composed of a selected materials from a group consisting of titanium, tungsten and an aluminum-added silicon material.
13. The mirror device according to claim 11 , wherein:
the mirror is composed of a material comprising a silicon (Si)-added aluminum.
14. The mirror device according to claim 11 , wherein:
the hinge is composed of a material comprises a silicon doped with either one of a group III atom and a group V atom.
15. The mirror device according to claim 14 , wherein:
the hinge is composed the silicon doped with either one of the group III atom and the group V atom by applying an in-situ doping process on the silicon.
16. The mirror device according to claim 11 , wherein:
the hinge is composed of a material selected from a group of materials consisting of an amorphous silicon, a poly-silicon, a single crystal silicon and a silicon germanium.
17. The mirror device according to claim 11 , wherein:
the hinge further having a thickness including both ends of the hinge ranging between 200 angstroms to 1000 angstroms, both ends inclusive.
18. The mirror device according to claim 17 , wherein:
the hinge further having a thickness including both ends of the hinge ranging between 400 angstroms to 800 angstroms.
19. The mirror device according to claim 11 , wherein:
the mirror comprises a first principal surface facing the substrate and a second principal surface opposite the first principle surface functioning as a reflection surface, wherein a distance between the first principal surface and a first end surface of the first edge part facing the substrate is less than or equal to one half of a thickness of the mirror.
20. The mirror device according to claim 11 , wherein:
the hinge is composed of a material having a hinge electrical resistance less than or equal to 1 giga-ohms.
21. The mirror device according to claim 11 , wherein:
the hinge extended from the substrate with an angle between the hinge and the substrate ranging substantially between 80 degrees to 90 degrees.
22. A mirror device comprising:
a substrate;
a mirror disposed approximately in parallel to the substrate above the substrate;
a hinge supported on and extended approximately perpendicularly from the substrate for supporting the mirror, wherein the hinge is connected to the mirror with a first edge part of the hinge buried in the mirror; and
the hinge is composed of a material having a hinge electrical resistance less than or equal to 1 giga-ohms.
23. A mirror device, comprising:
a substrate;
a mirror disposed above the substrate;
a hinge supported on and extended from the substrate for supporting the mirror, wherein the hinge further comprises a hinge tip attached directly to a bottom surface of said mirror whereby said hinge having no horizontal structural part attached to the mirror.
24. The mirror device according to claim 23 , wherein:
the hinge tip penetrates a bottom surface of said mirror buried in a layer of said mirror beneath a top surface of the mirror.
25. The mirror device according to claim 23 , wherein:
the hinge is composed of a material comprises a silicon doped with either one of a group III atom and a group V atom.
26. The mirror device according to claim 23 , wherein:
said hinge further comprises a barrier layer disposed on top of said hinge tip buried in said layer of said mirror.
27. A mirror device, comprising:
a substrate;
a mirror comprises a single mirror layer with a top mirror surface disposed above the substrate; and
a hinge supported on and extended from the substrate for supporting the mirror; and
wherein the hinge penetrates a bottom surface of said single mirror layer with an edge buried in the single mirror layer beneath the top mirror surface.
28. The mirror device according to claim 27 , wherein:
the hinge is composed of a material comprises a silicon doped with either one of a group III atom and a group V atom.