Manufacturing method of a semiconductor device
View Patent ↗A manufacturing method of a semiconductor device comprises a process of doping conductive impurities in a silicon carbide substrate, a process of forming a cap layer on a surface of the silicon carbide substrate, a process of activating the conductive impurities doped in the silicon carbide substrate, a process of oxidizing the cap layer after a first annealing process, and a process of removing the oxidized cap layer. It is preferred that the cap layer is formed from material that includes metal carbide. Since the oxidation onset temperature of metal carbide is comparatively low, the oxidization of the cap layer becomes easy if metal carbide is included in the cap layer. Specifically, it is preferred that the cap layer is formed from metal carbide that has an oxidation onset temperature of 1000 degrees Celsius or below, such as tantalum carbide.
1. A manufacturing method of a semiconductor device, comprising:
doping conductive impurities in a silicon carbide substrate;
forming a cap layer on a surface of the silicon carbide substrate, the cap layer including at least one kind of metal carbide;
activating the conductive impurities doped in the silicon carbide substrate by heat-treating the silicon carbide substrate in a deoxygenized atmosphere;
oxidizing the cap layer formed on the silicon carbide substrate by heat-treating the silicon carbide substrate in an oxygen-containing atmosphere; and
removing the oxidized cap layer from the silicon carbide substrate.
2. A manufacturing method as set forth in claim 1 , wherein the cap layer is mainly composed of the at least one kind of metal carbide.
3. A manufacturing method as set forth in claim 2 , wherein
the melting point of the at least one kind of metal carbide is higher than a heat-treatment temperature for activating the conductive impurities, and
the oxidation onset temperature of the at least one kind of metal carbide is lower than 1000 degrees Celsius.
4. A manufacturing method as set forth in claim 3 , wherein the melting point of the at least one kind of metal carbide is higher than the melting point of the silicon carbide substrate.
5. A manufacturing method as set forth in claim 4 , wherein the at least one kind of metal carbide is one or more of tantalum carbide, titanium carbide, zirconium carbide, hafnium carbide, vanadium carbide, and niobium carbide.