Granted Patent B2

US 8,865,268 · App. 12/387,208 · Granted Oct 21, 2014

Abstract

Claims (13)

1. A method comprising:

forming a recess using a focussed ion beam in a graphene layer wherein the recess creates a boundary between a first portion of the graphene layer and a second portion of the graphene layer, wherein the first portion comprises a nanoribbon, wherein the second portion comprises a nanoribbon, and wherein a width of each nanoribbon is between about 10 nm and about 150 nm;

depositing electrically insulating material within the recess using a focussed ion beam; and

depositing an electrically conductive material over the insulating material using a focussed ion beam.

2. A method as claimed in claim 1 comprising enabling an electrical connection to be made to the first portion of the graphene layer.

3. A method as claimed in claim 1 wherein the recess separates the first portion of the graphene layer from the second portion of the graphene layer.

4. A method as claimed in claim 1 wherein the recess surrounds the first portion of the graphene layer.

5. A method as claimed in claim 1 wherein the insulating material comprises an oxide.

6. A method as claimed in claim 5 wherein the insulating material comprises silicon dioxide.

7. A method as claimed in claim 1 wherein the electrically conductive material comprises chromium alloy.

8. A method as claimed in claim 1 comprising depositing a contact portion wherein the contact portion provides an electrical connection between the first portion of the graphene layer and the electrically conductive material.

9. A method as claimed in claim 8 wherein the contact portion comprises a different material to the electrically conductive material.

10. A method as claimed in claim 9 wherein the contact portion comprises palladium.

Assignments (8)