Electro-luminescence device including a thin film transistor and method of fabricating an electro-luminescence device

1. An electro-luminescence device comprising:

an electro-luminescence element; and

a thin film transistor electrically connected to the electro-luminescence element, the thin film transistor comprising:

a gate electrode disposed on a substrate;

an insulating layer disposed on the gate electrode;

a first semiconductor pattern disposed on the insulating layer;

an etch stop layer disposed on the first semiconductor layer;

a source electrode disposed on the first semiconductor pattern; and

a drain electrode disposed on the first semiconductor pattern spaced apart from the source electrode.

2. The electro-luminescence device of claim 1 , wherein the thin film transistor further comprises:

a second semiconductor pattern disposed between the etch stop layer and the source electrode; and

a third semiconductor pattern disposed between the etch stopper layer and the drain electrode layer.

3. The electro-luminescence device of claim 2 , wherein the second semiconductor pattern and the third semiconductor pattern comprise n+ silicon pattern.

4. The electro-luminescence device of claim 1 , wherein the electro-luminescence element comprises:

an anode electrode;

a light emitting layer formed over the anode electrode; and

a cathode electrode formed over the light emitting layer.

5. The electro-luminescence device of claim 4 , wherein the anode electrode is electrically connected to the drain electrode of the thin film transistor.

6. The electro-luminescence device of claim 4 , wherein the light emitting layer is an organic light emitting layer.

7. An electro-luminescence device, comprising:

a gate bus line extending in a first direction over a substrate;

a data bus line extending in a second direction over the substrate;

a power supply line extending parallel to the data bus line over the substrate;

a switching transistor electrically connected to the gate bus line, the switching transistor comprising:

a first gate electrode extending from the gate bus line;

a first semiconductor pattern formed on the first gate electrode;

a first etch stop layer formed on the first semiconductor pattern;

a first source electrode formed on the first semiconductor pattern, the first source electrode extending from the data bus line; and

a first drain electrode formed on the first semiconductor pattern;

a driving transistor electrically connected to the power supply line, the driving transistor comprising:

a second gate electrode electrically connected to the first drain electrode of the switching transistor;

a fourth semiconductor pattern formed over the second gate electrode;

a second etch stop layer formed over the fourth semiconductor pattern;

a second source electrode formed on the fourth semiconductor layer, the second source electrode extending from the power supply line; and

a second drain electrode formed on the fourth semiconductor layer;

an electro-luminescence element electrically connected to the second drain electrode of the driving transistor.

8. The electro-luminescence device of claim 7 , wherein the switching transistor further comprises:

a second semiconductor pattern disposed between the first semiconductor pattern and the first source electrode; and

a third semiconductor pattern disposed between the first semiconductor pattern and the first drain electrode,

and wherein the driving transistor further comprises:

a fifth semiconductor pattern disposed between the fourth semiconductor pattern and the second source electrode; and

a sixth semiconductor pattern disposed between the fourth semiconductor pattern and the second drain electrode.

9. The electro-luminescence device of claim 8 , wherein the second, third, fifth and sixth semiconductor patterns comprise n+ silicon pattern.

10. The electro-luminescence device of claim 7 , wherein the electro-luminescence element comprises:

an anode electrode electrically connected to the second drain electrode of the driving transistor;

a light emitting layer formed over the anode electrode; and

a cathode electrode formed over the light emitting layer.

11. The electro-luminescence device of claim 10 , wherein the light emitting layer is an organic light emitting layer.

12. The electro-luminescence device of claim 7 , wherein the first and fourth semiconductor patterns are formed of an amorphous silicon film.

13. The electro-luminescence device of claim 7 , wherein the first and second etch stop layers have a thickness of about 100 Å to about 200 Å.

14. The electro-luminescence device of claim 7 , further comprising:

a connecting electrode that connects the first drain electrode to the second gate electrode.