Integrated circuit nanowires
View Patent ↗Implementations of encapsulated nanowires are disclosed.
1. A method for producing encapsulated nanowires, comprising:
providing a substrate having a surface layer;
patterning the surface layer to form nanometer-sized features;
disposing a conductive material in the nanometer-sized features using a metal precursor conveyed in a supercritical carbon dioxide to form nanowires on the substrate;
removing the surface layer; and
forming one or more insulating monolayers to entirely encapsulate the nanowires, wherein forming each of the one or more insulating monolayers includes disposing a self-assembled monolayer (SAM) including octadecylsiloxane (ODS) at a temperature of less than about 350° C. and oxidizing the ODS by an exposure of ultraviolet radiation.
2. The method of claim 1 , wherein the surface layer comprises a photoresist layer and wherein patterning the surface layer comprises performing lithography to pattern the photoresist layer.
3. The method of claim 2 , wherein performing lithography comprises performing one of nanoimprint lithography, electron beam lithography or extreme ultraviolet photolithography.
4. The method of claim 1 , wherein the insulating material comprises silicon dioxide.
5. The method of claim 1 , wherein the conductive material comprises copper, aluminum, tungsten, or any combination thereof.
6. The method of claim 1 , wherein the surface layer comprises a stressed silicon dioxide layer and wherein patterning the surface layer comprises forming nanometer-sized cracks in the stressed silicon dioxide layer.
7. The method of claim 6 , further comprising:
patterning the substrate prior to disposing the surface layer on the substrate.
8. The method of claim 6 , wherein disposing the conductive material in the nanometer-sized features comprises disposing the metal in the nanometer-sized cracks.
9. The method of claim 1 , wherein disposing the conductive material in the nanometer-sized features comprises disposing the conductive material in the nanometer-sized features at temperatures of less than about 350° C.